Electrical modulation of excitonic transition in monolayer tungsten disulfide on periodically poled ferroelectric substrates

다국어 초록 (Multilingual Abstract)

Although the spectral investigation of monolayer two-dimensional transition metal dichalcogenide (1L-TMD) has been extensively performed for identifying modulation of excitonic transition, study of excitonic transition in ferroelectric/TMD hybrid structure is essential to understand and design high speed and low loss devices based on in-plane junctions. Here, we demonstrate electrical modulation of excitonic transition by transferring 1L-tungsten disulfide (WS2) onto a ferroelectric domain surface, a periodically poled lithium niobate (PPLN). We observe that exciton (A0) and trion (A-) emissions of 1L-WS2 are spatially modulated depending on the sign of the phase domain, such that A0 and A- emission is stronger at the positive (D+) and negative (D-) domain, respectively. In addition, different trends of excitonic transition of 1L-WS2 between D+ and D- domain are demonstrated by applying a back-gate bias voltage. The spatial modulation of electrical and optical characteristics of 1L-TMDs will help to design the homo- or hetero p-n junctions based on TMDs.

참고문헌 (Reference)

1 A. Nguyen, "Toward ferroelectric control of monolayer MoS2" 15 : 3364-3369, 2015

2 K. F. Mak, "Tightly bound trions in monolayer MoS2" 12 : 207-211, 2013

3 S. M. Neumayer, "Surface chemistry controls anomalous ferroelectric behavior in lithium niobate" 10 : 29153-29160, 2018

4 J. Ye, "Superconducting dome in a gate-tuned band insulator" 338 : 1193-1196, 2012

5 T. Young, "Structural, magnetic, and ferroelectric properties of T-like cobalt-doped BiFeO3 thin films" 6 : 026102-, 2018

6 C. H. Li, "Spatial control of photoluminescence at room temperature by ferroelectric domains in monolayer WS2/PZT hybrid structures" 1 : 1075-1080, 2016

7 H. S. Lee, "Reconfigurable exciton-plasmon interconversion for nanophotonic circuits" 7 : 1-6, 2016

8 A. Gruverman, "Piezoresponse force microscopy and nanoferroic phenomena" 10 : 1-9, 2019

9 C. Cong, "Optical properties of 2D semiconductor WS2" 6 : 1700767-, 2018

10 J. H. Kim, "Optical logic operation via plasmon-exciton interconversion in 2D semiconductors" 9 : 1-7, 2019

11 J. Shang, "Observation of excitonic fine structure in a 2D transition-metal dichalcogenide semiconductor" 9 : 647-655, 2015

12 A. I. Khan, "Negative capacitance in a ferroelectric capacitor" 14 : 182-186, 2015

13 Y. Lee, "Near-field spectral mapping of individual exciton complexes of monolayer WS2 correlated with local defects and charge population" 9 : 2272-2278, 2017

14 Y. Kim, "Near-field optical imaging and spectroscopy of 2D-TMDs" 10 : 3397-3415, 2021

15 R. P. Dwyer, "Microsecond photocapacitance transients observed using a charged microcantilever as a gated mechanical integrator" 3 : e1602951-, 2017

16 G. Ghimire, "Local enhancement of exciton emission of monolayer MoS2 by copper phthalocyanine nanoparticles" 122 : 6794-6800, 2018

17 A. S. Sharbirin, "Light-emitting MXene quantum dots" 4 : 03200077-, 2021

18 W. Du, "Highly efficient on-chip direct electronic–plasmonic transducers" 11 : 623-627, 2017

19 B. Wen, "Ferroelectric-driven exciton and trion modulation in monolayer molybdenum and tungsten diselenides" 13 : 5335-5343, 2019

20 C. Zhou, "Ferroelectric-Gated two-dimensional-material-based electron devices" 3 : 1600400-, 2017

21 J. Iniguez, "Ferroelectric negative capacitance" 4 : 243-256, 2019

22 R. Xu, "Extraordinarily bound quasi-one-dimensional trions in two-dimensional phosphorene atomic semiconductors" 10 : 2046-2053, 2016

23 B. Zhu, "Exciton binding energy of monolayer WS2" 5 : 1-5, 2015

24 S. Kim, "Electrostatic-free piezoresponse force microscopy" 7 : 1-8, 2017

25 Y. Shen, "Electrostatic force spectroscopy revealing the degree of reduction of individual graphene oxide sheets" 9 : 1146-1155, 2018

26 P. Zhao, "Electronic and optical properties of transition metal dichalcogenides under symmetric and asymmetric field-effect doping" 22 : 083072-, 2020

27 R.J.P. Roman, "Electroluminescence of monolayer WS2 in a scanning tunneling microscope: effect of bias polarity on spectral and angular distribution of emitted light" 106 : 085419-, 2022

28 J. S. Ross, "Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions" 9 : 268-272, 2014

29 K. L. Seyler, "Electrical control of second-harmonic generation in a WSe2 monolayer transistor" 10 : 407-411, 2015

30 P. K. Chow, "Defect-induced photoluminescence in monolayer semiconducting transition metal dichalcogenides" 9 : 1520-1527, 2015

31 Y. Lee, "Controlling lattice defects and inter-exciton interactions in monolayer transition metal dichalcogenides for efficient light emission" 5 : 4187-4194, 2018

32 N. Peimyoo, "Chemically driven tunable light emission of charged and neutral excitons in monolayer WS2" 8 : 11320-11329, 2014

33 P. Soubelet, "Charged exciton kinetics in monolayer MoSe2 near ferroelectric domain walls in periodically poled LiNbO3" 21 : 959-966, 2021

34 V. Huard, "Bound states in optical absorption of semiconductor quantum wells containing a two-dimensional electron gas" 84 : 187-, 2000

35 Y. Lee, "Boosting quantum yields in two-dimensional semiconductors via proximal metal plates" 12 : 1-9, 2021

36 S. Roy, "Atomic observation of filling vacancies in monolayer transition metal sulfides by chemically sourced sulfur atoms" 18 : 4523-4530, 2018

37 C. F. Pulvari, "An electrostatically induced permanent memory" 22 : 1039-1044, 1951

38 C. Yang, "All-optical reversible manipulation of exciton and trion emissions in monolayer WS2" 10 : 23-, 2020

39 J. -W. Chen, "A gate-free monolayer WSe2 pn diode" 9 : 1-7, 2018

40 C. Yin, "A ferroelectric relaxor polymer-enhanced p-type WSe 2 transistor" 10 : 1727-1734, 2018

41 Y.-Q. Bie, "A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits" 12 : 1124-1129, 2017