1 "Sentaurus User Manual, Synopsys, Mountain View"
2 E. Gnani, "Numerical investigation on the junctionless nanowire FET" 71 (71): 13-18, 2012
3 L. Esaki, "New phenomenon in narrow germanium p-n junctions" 109 (109): 603-604, 1958
4 B. M. Wilamowski, "Negative resistance element for a static memory cell based on enhanced surface generation" 11 (11): 451-453, 1990
5 S. Shin, "Negative differential resistance devices with ultra-high peakto- valley current ratio based on silicon nanowire structure" 63-64, 2012
6 S.-L. Chen, "Negative differential resistance circuit design and memory applications" 56 (56): 634-640, 2009
7 Y. Liang, "From DRAM to SRAM with a novel SiGe-based negative differential resistance (NDR) device" 959-962, 2005
8 K. R. Kim, "Field-induced interband tunneling effect transistor (FITET) with negativedifferential transconductance and negativedifferential conductance" 4 (4): 317-321, 2005
9 K. R. Kim, "Effects of local electric field and effective tunnel mass on the simulation of band-to-band tunnel diode model" 159-152,
10 A. Ramesh, "Boron delta-doping dependence on Si/SiGe resonant interband tunneling diode grown by chemical vapor deposition" 59 (59): 602-609, 2012
1 "Sentaurus User Manual, Synopsys, Mountain View"
2 E. Gnani, "Numerical investigation on the junctionless nanowire FET" 71 (71): 13-18, 2012
3 L. Esaki, "New phenomenon in narrow germanium p-n junctions" 109 (109): 603-604, 1958
4 B. M. Wilamowski, "Negative resistance element for a static memory cell based on enhanced surface generation" 11 (11): 451-453, 1990
5 S. Shin, "Negative differential resistance devices with ultra-high peakto- valley current ratio based on silicon nanowire structure" 63-64, 2012
6 S.-L. Chen, "Negative differential resistance circuit design and memory applications" 56 (56): 634-640, 2009
7 Y. Liang, "From DRAM to SRAM with a novel SiGe-based negative differential resistance (NDR) device" 959-962, 2005
8 K. R. Kim, "Field-induced interband tunneling effect transistor (FITET) with negativedifferential transconductance and negativedifferential conductance" 4 (4): 317-321, 2005
9 K. R. Kim, "Effects of local electric field and effective tunnel mass on the simulation of band-to-band tunnel diode model" 159-152,
10 A. Ramesh, "Boron delta-doping dependence on Si/SiGe resonant interband tunneling diode grown by chemical vapor deposition" 59 (59): 602-609, 2012
11 R. Duane, "Bistable gated bipolar device" 24 (24): 661-664, 2003
12 A. Schenk, "A model for the field and temperature dependence of Shockley-Read-Hall lifetimes in silicon" 35 (35): 1585-1596, 1992
13 X. Cheng, "A Comprehensive study of bistable gated bipolar device" 53 (53): 2589-2597, 2006