마그네트론 스퍼터링법으로 제조한 P형 (Bi₁-xSbx)₂Te₃ 박막의 결정성과 열전특성

국문 초록 (Abstract)

마그네트론 스퍼터링법으로 p형 (Bi_(0.15)Sb_(0.82))₂Te₃과 (Bi_(1-x)Sb_x)₂Te₃ 열전박막을 제조하여 스퍼터 증착조건 및 Sb₂Te₃ 함량에 따른 열전특성을 분석하였다. Coming glass 기판을 10 rpm으로 회전시키며 DC 스퍼터링법으로 300℃에서 증착한(Bi_(0.15)Sb_(0.82))₂Te₃ 박막은 (Bi,Sb)₂Te₃ 단일상으로 결정화가 완료되고 c축 우선배향성을 나타내었으며, 다른 조건으로 증착한 (Bi_(0.15)Sb_(0.82))₂Te₃ 박막보다 높은 185 ㎶/K의 Seebeck 계수를 나타내었다. p형 (Bi_(1-x)Sb_x)₂Te₃ (0.77≤x≤1.0) 박막에서는 Sb₂Te₃ 함량이 증가함에 따라 Seebeck 계수와 전기비저항이 감소하였으며 (Bi_(0.05)Sb_(0.95))₂Te₃ 조성에서 0.79×10^(-3) W/K²-m의 최대 출력인자를 나타내었다.

다국어 초록 (Multilingual Abstract)

(Bi_(0.15)Sb_(0.85))₂Te₃ and (Bi_(1-x)Sb_x)₂Te₃ thermoelectric thin films were prepared by magnetron sputtering process, and their thermoelectric characteristics were investigated with variation of the sputtering condition and the Sb₂Te₃ content. The (Bi_(0.15)Sb_(0.85))₂Te₃ film, deposited by DC sputtering at 300℃ with rotating the Coming glass substrate at 10 rpm, was fully crystallized to (Bi,Sb)₂Te₃ phase with c-axis preferred orientation. This (Bi_(0.15)Sb_(0.85))₂Te₃ film exhibited the Seebeck coefficient of 185 ㎶/K which was higher than the values of other (Bi_(0.15)Sb_(0.85))₂Te₃ films fabricated with different sputtering conditions. With increasing the Sb₂Te₃ content, the Seebeck coefficient and electrical resistivity of p-type (Bi_(1-x)Sb_x)₂Te₃ (0.77≤x≤1.0) film were lowered. Among p-type (Bi(1-x)Sb_x)₂Te₃ films, a maximum power factor of 0.79×10^(-3) W/K²-m was obtained at (Bi_(0.05)Sb_(0.95))₂Te₃ composition.

목차 (Table of Contents)

• 요약
  
• Abstract
  
• 1. 서론
  
• 2. 실험 방법
  
• 3. 결과 및 고찰
  
• 4. 결론
  
• 감사의 글
  
• 참고문헌