In this paper, the influence of annealing temperature on amorphous indium‐zinc‐tungsten‐oxide (a‐IZWO) thin‐film transistors (TFTs) is investigated. As the annealing temperature increases, the IZWO films maintain an amorphous state, which is...
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https://www.riss.kr/link?id=O119935603
2018년
-
1862-6300
1862-6319
SCI;SCIE;SCOPUS
학술저널
n/a-n/a [※수록면이 p5 이하이면, Review, Columns, Editor's Note, Abstract 등일 경우가 있습니다.]
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
In this paper, the influence of annealing temperature on amorphous indium‐zinc‐tungsten‐oxide (a‐IZWO) thin‐film transistors (TFTs) is investigated. As the annealing temperature increases, the IZWO films maintain an amorphous state, which is...
In this paper, the influence of annealing temperature on amorphous indium‐zinc‐tungsten‐oxide (a‐IZWO) thin‐film transistors (TFTs) is investigated. As the annealing temperature increases, the IZWO films maintain an amorphous state, which is conducive to the uniformity of the TFT. The field effect mobility of the device increases as a function of annealing temperature and reaches 16.2 cm2 V−1 s−1 at 300 °C, along with an on/off current ratio of 1.6 × 108. Meanwhile, the corresponding positive bias stability is improved, as confirmed by the fact that the threshold voltage shift value reduces to 0.4 V after being stressed for 1500 s. This result can be ascribed to the decrease in electrons captured by the deep defects in a‐IZWO TFTs.
The influence of annealing temperature on amorphous indium‐zinc‐tungsten‐oxide thin‐film transistors is investigated. As the annealing temperature increases, the field effect mobility of the device increases as a function of annealing temperature. Meanwhile, the corresponding positive bias stability is improved. This result can be ascribed to the decrease in electrons captured by the deep defects in a‐IZWO TFTs.
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