Growth and Physical Properties of p-ZnxCd1−xS Thin Films Thermally Evaporated on ITO-coated Glass Substrates

다국어 초록 (Multilingual Abstract)

ZnxCd1−xS (x = 0.15, 0.44, 0.62, 0.80, and 0.95) thin films of about 340 nm in thickness weredeposited on indium-tin-oxide (ITO)-coated glass substrates by using thermal evaporation of highpurityZnS and CdS mixed tablets in high vacuum. X-ray diffraction spectra showed that theZnxCd1−xS thin films were preferentially grown along the (111) orientation. The ZnxCd1−xS crystalstructure was a mixture structure of the ZnS and the CdS cubic zincblende structures with latticeconstants a = 5.670 °A to a = 5.734 °A for CdS and a = 5.437 °A for ZnS. The (h)2 vs. h plotsfor the ZnxCd1−xS thin films showed that all samples had direct transition band gaps. The energyband gaps of the ZnxCd1−xS thin films increased monotonically from 2.45 eV for x = 0.15 to 3.37eV for x = 0.95. The dynamical behavior of the charge carriers in the ZnxCd1−xS thin films wasinvestigated by using the photoinduced discharge characteristics (PIDC) technique.

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