In this study, TiO_(2) thin films were fabricated by Sol-Gel Method. The thin films by Sol-Gel Method were shown uniform on the surface of films by SEN. The heat treatment temperature of TiO_(2) thin films is at 500℃. The dielectric properties with ...
In this study, TiO_(2) thin films were fabricated by Sol-Gel Method. The thin films by Sol-Gel Method were shown uniform on the surface of films by SEN. The heat treatment temperature of TiO_(2) thin films is at 500℃. The dielectric properties with variation of the synthesis condition were investigated and the specimens had difference of permittivity according to the synthesis condition.
The change of thickness of TIO_(2) film was studied with the number of dipping. The thickness of TIO_(2) film was increased with the number of dipping and it wits increased 0.1-0.3μm every a dipping.