E-beam lithography를 이용한 0.1$\mu\textrm{m}$ NMOSFET 제작 = The Fabrication of the 0.1$\mu\textrm{m}$ NMOSFET by E-beam Lithography

다국어 초록 (Multilingual Abstract)

The NMOSFET with gate length of 0.1$\mu$m is fabricated by mix-and-match method. In this device, the electron beam lithography is used to form the gate layer, while other layers are formed by the stepper. The gate oxide is 7nm thick, and the device structure is normal LDD structure. The saturation Gm for gate length of 0.1$\mu$m is 246mS/mm. The subthreshold slope is 180mV/decade for 0.1$\mu$m gate length, but the slope is 80mV/decade for 0.3$\mu$m gate length.