1 H. B. Michaelson, 22 : 72-, 1978
2 F. J. G. R. A. Godoy, 54 : 3369-, 2007
3 S. N. Cha, 89 : 263102-, 2006
4 S. M. Koo, 5 : 2519-, 2005
5 K. N. Lee, 1269-, 2006
6 A. Bindal, 6 : 291-, 2007
7 S. H. Ju, 18 : 155201-, 2007
8 C.-F. Huang, 27 : 43-, 2006
9 D. A. Neaman, "Semiconductor Physics and Devices" McGraw-Hill 453-, 2003
10 Chiyui Ahn, "Quantum Simulation of Coaxially Gated CNTFETs by Using an Effective Mass Approach" 한국물리학회 50 (50): 1887-1893, 2007
1 H. B. Michaelson, 22 : 72-, 1978
2 F. J. G. R. A. Godoy, 54 : 3369-, 2007
3 S. N. Cha, 89 : 263102-, 2006
4 S. M. Koo, 5 : 2519-, 2005
5 K. N. Lee, 1269-, 2006
6 A. Bindal, 6 : 291-, 2007
7 S. H. Ju, 18 : 155201-, 2007
8 C.-F. Huang, 27 : 43-, 2006
9 D. A. Neaman, "Semiconductor Physics and Devices" McGraw-Hill 453-, 2003
10 Chiyui Ahn, "Quantum Simulation of Coaxially Gated CNTFETs by Using an Effective Mass Approach" 한국물리학회 50 (50): 1887-1893, 2007
11 Moongyu JANG, "Novel Properties of Erbium-Silicided n-type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors" 한국물리학회 45 (45): 881-885, 2004
12 Byoungchul Park, "Characteristics of n-Type SB-MOSFETs Manufactured by Using a Metal-Gate & a High-K Dielectric" 한국물리학회 50 (50): 893-896, 2007
13 "ATLAS Manual by SILVACO INTERNATIONAL"