Temperature dependence and the effect of hydrogen peroxide on ITO/poly-ZnO Schottky diodes fabricated by laser evaporation

다국어 초록 (Multilingual Abstract)

Transparent and efficient poly-ZnO ultraviolet Schottky diodes grown at different temperatures with indium-tin-oxide (ITO) as the metallic contact layer were fabricated with hydrogen peroxide (H2O2)applied as a surface treatment at 70 ℃ for 20 min. Analysis via field-emission scanning electron microscopy (FESEM) and X-ray photoelectron spectroscopy (XPS) demonstrated that the ZnO films underwent gradual oxidation and that H2O2 treatment resulted in an interfacial ZnO2 layer that covered the ZnO surface. IeV measurements indicated that the ideality factor and the Schottky barrier height improved with increasing shunt resistance, and the trade-off between film quality and the degree of oxidation revealed that films grown at 400 ℃ exhibited the best diode characteristics.

참고문헌 (Reference)

1 F.-C. Huang, 20 : 065501-, 2009

2 J.H. Werner, 47 : 291-300, 1988

3 S.K. Cheung, 49 : 85-, 1986

4 Y.-L. Wang, 11 : H88-H91, 2008

5 A. Donato, 517 : 6184-6187, 2009

6 H. Fabricius, 25 : 2764-2767, 1986

7 F.D. Auret, 79 : 3074-3076, 2001

8 M.W. Allen, 91 : 053512-, 2007

9 R. Schifano, 91 : 193507-, 2007

10 K. Ip, 84 : 2835-2837, 2004

11 L.J. Brillson, 90 : 102116-, 2007

12 M.C. Newton, 89 : 072104-, 2006

13 M. Nakano, 91 : 142113-, 2007

14 A.Y. Polyakov, 83 : 1575-1577, 2003

15 B.J. Coppa, 82 : 400-402, 2003

16 S.-H. Kim, 86 : 022101-, 2005

17 K. Ip, 236 : 387-393, 2004

18 S.-H. Kim, 86 : 112101-, 2005

19 C.-H. Tsai, 257 : 610-615, 2010

20 A. Nakamura, 109 : 093517-, 2011

21 Vl Kolkovsky, 98 : 082104-, 2011

22 H.-Y. Lee, 50 : 088004-, 2011

23 S. Lindroos, 2 : 197-201, 2000

24 Y.S. Rim, 97 : 233502-, 2010

25 K. Ellmer, "Transparent Conductive Zinc Oxide" Springer-Verlag 2008

26 J.F. Moulder, "Handbook of X-ray Photoelectron Spectroscopy" Perkin-Elmer 1995