Low Damage and Anisotropic Dry Etching of High-k Dielectric HfO₂ Films in Inductively Coupled Plasmas

다국어 초록 (Multilingual Abstract)

The etch characteristics of high-k dielectric HfO₂ films and the etch selectivity for HfO₂ over Si in fluorineand chlorine-based inductively coupled plasmas have been studied. Fluorine-based ICP discharges produced practical and controllable etch rates and the etched HfO₂ surfaces sustained similar or better RMS roughness values than that of the unetched control sample under most of the conditions examined. Anisotropic pattern transfer with a vertical sidewall profile (θ = 97°) was performed in CF4/Ar ICP discharges and no significant change in the dielectric property of HfO₂ films was detected. 5Cl₂/10O₂ ICP discharges produced high etch selectivities > 6.3 (max. ~7.6) for HfO₂ over Si.

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