Effect of F− Implantation on the Optical and the Electrical Properties of GaInZnO Thin Films

다국어 초록 (Multilingual Abstract)

GaInZnO (GIZO) thin films have been deposited on 100 nm SiO2/(100) Si wafers by RF magnetron
sputtering and were subsequently implanted with F− ions at various fluences and energies.
Broad photoluminescence (PL) spectra, peaked at about 715 nm, are observed in as-deposited GIZO
films, and are attributed to oxygen-deficient defects. The implantation reduces the PL intensity and
enhances the conductivity. The PL enhancement is more effective at higher fluences and energies.
The influence of annealing on the PL and the conductivity after implantation is much larger than
that of annealing without implantation. These results indicate that the F− ions are substitutionally
incorporated in the GIZO films as shallow donors producing free carriers and that they occupy the
oxygen vacancies, thereby reducing the defect density.

다국어 초록 (Multilingual Abstract)

GaInZnO (GIZO) thin films have been deposited on 100 nm SiO2/(100) Si wafers by RF magnetron
sputtering and were subsequently implanted with F− ions at various fluences and energies.
Broad photoluminescence (PL) spectra, peaked at about 715 nm, are observed in as-deposited GIZO
films, and are attributed to oxygen-deficient defects. The implantation reduces the PL intensity and
enhances the conductivity. The PL enhancement is more effective at higher fluences and energies.
The influence of annealing on the PL and the conductivity after implantation is much larger than
that of annealing without implantation. These results indicate that the F− ions are substitutionally
incorporated in the GIZO films as shallow donors producing free carriers and that they occupy the
oxygen vacancies, thereby reducing the defect density.

참고문헌 (Reference)

1 H. Ohta, 7 : 42-, 2004

2 A. Janotti, 6 : 44-, 2007

3 K. Nomura, 432 : 488-, 2004

4 H. Yabuta, 89 : 112123-, 2006

5 J. Park, 93 : 053505-, 2008

6 J. Park, 29 : 879-, 2008

7 M. Kimura, 92 : 133512-, 2006

8 I.-K. Jeong, 108 : 823-, 1998

9 P. M. Ratheesh Kumar, 117 : 307-, 2005

10 I. Sakaguchi, 206 : 153-, 2003

11 K. Nomura, 45 : 4303-, 2006

12 G. A. Shi, 72 : 195211-, 2005

13 T. Kamiya, 2 : 285-, 2005

14 C. G. Van de Walle, 85 : 1012-, 2000

15 S. Kim, 103 : 023514-, 2008

16 김성, "Effect of Ge Concentration on the Temperature Dependence of Photoluminescence from Ge-Doped ZnO" 한국물리학회 53 (53): 426-430, 2008

17 Do Kyu Lee, "Annealing Effect on the Electrical and the Optical Characteristics of Undoped ZnO Thin Films Grown on Si Substrates by RF Magnetron Sputtering" 한국물리학회 51 (51): 1378-1382, 2007