Modulating reliable doping of two-dimensional (2D) black phosphorus (BP) is crucial for building complementarylogic devices based on BP channels. However, most studies on doping techniques for BP devices have aimed to realize n -typedoping eff ect rat...
Modulating reliable doping of two-dimensional (2D) black phosphorus (BP) is crucial for building complementarylogic devices based on BP channels. However, most studies on doping techniques for BP devices have aimed to realize n -typedoping eff ect rather than p -type one. Herein, we demonstrate AuCl 3 molecular doping of BP devices to realize the p -typedoping eff ect. After AuCl 3 doping on BP, small Au nanoparticles are formed on the surface of BP fl akes. Such AuCl 3 -dopedBP devices exhibit a clear transition from ambipolar to unipolar behaviors ( p -type characteristics) as doping time graduallyincreases. This p -type doping eff ect originates from the electron withdraw ability due to the spontaneous interaction betweenthe AuCl 3 and unpaired electrons in BP. Using our doping strategy, we fabricate 2D diode devices consisting of a molybdenumdisulfi de (MoS 2 ) monolayer and BP fl akes. We confi rm a clear rectifying behavior, which is more enhanced usingAuCl 3 -doped BP devices, compared with pristine BP one. Consequently, these devices exhibited good responsivity of 2.4 AW − 1 and detectivity of 2.5 × 10 11 Jones, when illuminated with 530 nm light.