1 J. T. Kobayashi, 195 : 252-, 1998
2 G. Pozina, 88 : 2677-, 2000
3 S. Chichibu, 71 : 2346-, 1997
4 S. J. Rosner, 74 : 2035-, 1999
5 D. Cherns, 78 : 2691-, 2001
6 S. Nakamura, 68 : 3269-, 1996
7 Y. Kawaguchi, 189 : 24-, 1998
8 Y. S. Lin, 77 : 2986-, 2000
9 Jin Soak Kim, "Study on the Energy-Band Structure of Indium-Rich InGaN/GaN Quantum Dot System" 한국물리학회 51 (51): 1195-1198, 2007
10 S. C. Strite, "Properties of Group III Nitrides" INSPEC 262-, 1994
1 J. T. Kobayashi, 195 : 252-, 1998
2 G. Pozina, 88 : 2677-, 2000
3 S. Chichibu, 71 : 2346-, 1997
4 S. J. Rosner, 74 : 2035-, 1999
5 D. Cherns, 78 : 2691-, 2001
6 S. Nakamura, 68 : 3269-, 1996
7 Y. Kawaguchi, 189 : 24-, 1998
8 Y. S. Lin, 77 : 2986-, 2000
9 Jin Soak Kim, "Study on the Energy-Band Structure of Indium-Rich InGaN/GaN Quantum Dot System" 한국물리학회 51 (51): 1195-1198, 2007
10 S. C. Strite, "Properties of Group III Nitrides" INSPEC 262-, 1994
11 Su-Gwang Son, "Increase of the Light Extraction Efficiency in InGaN-Based Light-Emitting Diodes Integrated with Microlens Arrays Made of UV-Curable Optical Adhesive" 한국물리학회 51 (51): 377-382, 2007
12 Jae-Hoon LEE, "Growth and Characteristics of InGaN/GaN Films Grown on Hemispherical Patterned Sapphire by Using MOCVD" 한국물리학회 51 (51): 249-252, 2007
13 신희연, "A Study on Growth Characteristics of GaN Layers Grown by MOCVD on Si (111) Substrate" 한국물리학회 42 (42): 403-407, 2003