This article presents measurements of the piezoelectric modulus d11 of a single crystal of lanthanum gallium silicate (LGS, La3Ga5SiO14). The piezoelectric modulus was measured by X‐ray diffraction at angles close to backscattering. Experiments in s...
This article presents measurements of the piezoelectric modulus d11 of a single crystal of lanthanum gallium silicate (LGS, La3Ga5SiO14). The piezoelectric modulus was measured by X‐ray diffraction at angles close to backscattering. Experiments in such schemes are very sensitive to relative changes in the lattice constant in crystals caused by external influences (constant or alternating electric field, mechanical load, temperature change etc.). The development opportunity of the technique is shown, its applicability is evaluated and results of measurement of the LGS single‐crystal piezo modulus by the method of diffraction of synchrotron radiation at angles near π are discussed.
The diffraction response of a single crystal to an electric field is measured by X‐ray diffraction at angles close to π. Such schemes allow one to determine with high (∼10−5–10−6) accuracy the relative changes in the lattice constant.