Rutile TiO2 Active-channel Thin-film Transistor Using Rapid Thermal Annealing

다국어 초록 (Multilingual Abstract)

TiO2 active-channel thin-film transistors (TFTs), in which the bottom-gate top-contact architecturewas prepared with atomic layer deposition grown TiO2 as the semiconducting layer, werefabricated and then investigated based on key process parameters, such as the rapid thermal annealing(RTA) temperature. Structural analyses suggested that TiO2 films annealed at temperaturesabove 500 C changed from an amorphous to a rutile phase. The TFT with a TiO2 semiconductorannealed at 600 C exhibited strongly-saturated output characteristics, a much higher on/offcurrent ratio of 4.3 × 105, and an electron mobility of 0.014 cm2/Vs. Moreover, the potential formanipulating TiO2-based TFTs with RTA methodology was demonstrated through the realizationof a simple resistive-load inverter.

참고문헌 (Reference)

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