1 Zhiyong Fan, "ZnO nanowire field-effect transistor and oxygen sensing property" AIP Publishing 85 (85): 5923-5925, 2004
2 Leonard J. Brillson, "ZnO Schottky barriers and Ohmic contacts" AIP Publishing 109 (109): 121301-, 2011
3 Michael J. Kellicutt, "Variable-range-hopping conduction and the Poole-Frenkel effect in a copper polyaniline vermiculite intercalation compound" American Physical Society (APS) 47 (47): 13664-13673, 1993
4 Teresa Oh, "Tunneling phenomenon of amorphous indium-gallium-zinc-oxide thin film transistors for flexible display" Springer Nature 11 (11): 853-861, 2015
5 Teresa Oh, "Tunneling condition at high Schottky barrier and ambipolar transfer characteristics in zinc oxide semiconductor thin film transistor" Elsevier BV 77 : 1-7, 2016
6 Teresa Oh, "Study on Characteristic Properties of Annealed SiOC Film Prepared by Inductively Coupled Plasma Chemical Vapor Deposition" Institute of Electrical and Electronics Engineers (IEEE) 38 (38): 1598-1602, 2010
7 Qian Xin, "Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode" AIP Publishing 106 (106): 113506-, 2015
8 H. L. Mosbacker, "Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO" AIP Publishing 87 (87): 012102-, 2005
9 H.B. Liu, "Preparation of Na delta-doped p-type ZnO thin films by pulsed laser deposition using NaF and ZnO ceramic targets" Elsevier BV 540 : 53-57, 2013
10 Chun-Chieh Lo, "Preparation of IGZO sputtering target and its applications to thin-film transistor devices" Elsevier BV 38 (38): 3977-3983, 2012
1 Zhiyong Fan, "ZnO nanowire field-effect transistor and oxygen sensing property" AIP Publishing 85 (85): 5923-5925, 2004
2 Leonard J. Brillson, "ZnO Schottky barriers and Ohmic contacts" AIP Publishing 109 (109): 121301-, 2011
3 Michael J. Kellicutt, "Variable-range-hopping conduction and the Poole-Frenkel effect in a copper polyaniline vermiculite intercalation compound" American Physical Society (APS) 47 (47): 13664-13673, 1993
4 Teresa Oh, "Tunneling phenomenon of amorphous indium-gallium-zinc-oxide thin film transistors for flexible display" Springer Nature 11 (11): 853-861, 2015
5 Teresa Oh, "Tunneling condition at high Schottky barrier and ambipolar transfer characteristics in zinc oxide semiconductor thin film transistor" Elsevier BV 77 : 1-7, 2016
6 Teresa Oh, "Study on Characteristic Properties of Annealed SiOC Film Prepared by Inductively Coupled Plasma Chemical Vapor Deposition" Institute of Electrical and Electronics Engineers (IEEE) 38 (38): 1598-1602, 2010
7 Qian Xin, "Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode" AIP Publishing 106 (106): 113506-, 2015
8 H. L. Mosbacker, "Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO" AIP Publishing 87 (87): 012102-, 2005
9 H.B. Liu, "Preparation of Na delta-doped p-type ZnO thin films by pulsed laser deposition using NaF and ZnO ceramic targets" Elsevier BV 540 : 53-57, 2013
10 Chun-Chieh Lo, "Preparation of IGZO sputtering target and its applications to thin-film transistor devices" Elsevier BV 38 (38): 3977-3983, 2012
11 Oleg Mitrofanov, "Poole-Frenkel electron emission from the traps in AlGaN/GaN transistors" AIP Publishing 95 (95): 6414-6419, 2004
12 Anderson Janotti, "New insights into the role of native point defects in ZnO" Elsevier BV 287 (287): 58-65, 2006
13 M. E. Lopes, "Gate-bias stress in amorphous oxide semiconductors thin-film transistors" AIP Publishing 95 (95): 063502-, 2009
14 A. Togo, "First-principles calculations of native defects in tin monoxide" American Physical Society (APS) 74 (74): 2006
15 Jeffrey C. K. Lam, "Evidence of ultra-low-k dielectric material degradation and nanostructure alteration of the Cu/ultra-low-k interconnects in time-dependent dielectric breakdown failure" AIP Publishing 102 (102): 022908-, 2013
16 S. D. Ganichev, "Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors" American Physical Society (APS) 61 (61): 10361-10365, 2000
17 Teresa Oh, "Depletion Effect of Oxide Semiconductor Analyzed by Hall Effects" American Scientific Publishers 14 (14): 9047-9050, 2014
18 Teresa Oh, "Comparison between SiOC Thin Films Fabricated by Using Plasma Enhance Chemical Vapor Deposition and SiO2 Thin Films by Using Fourier Transform Infrared Spectroscopy" 한국물리학회 56 (56): 1150-1155, 2010
19 J. Maserjian, "Behavior of the Si/SiO2 interface observed by Fowler‐Nordheim tunneling" AIP Publishing 53 (53): 559-567, 1982