Temperature- and Excitation-power-dependent Optical Properties of InAs/GaAs Quantum Dots by Comparison of Photoluminescence and Photoreflectance Spectroscopy

다국어 초록 (Multilingual Abstract)

The optical properties of InAs/GaAs quantum dots (QDs) were investigated by using temperature-dependent and excitation-power-dependent photoreflectance (PR) spectroscopy, and the results were compared with those obtained using photoluminescence (PL) spectroscopy. We succeeded in evaluating the built-in electric field in InAs/GaAs QDs by using a PR experiment with the fast Fourier transform (FFT) method. The built-in electric field in InAs/GaAs QDs was strongly affected by the excitation-power and the sample temperatures. The temperature dependence of the built-in electric field in strained InAs/GaAs QDs may be explained by the temperature dependence of the carrier confinement effect in the InAs/GaAs QDs.

참고문헌 (Reference)

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