An Analytical Modeling of Threshold Voltage and Subthreshold Swing on Dual Material Surrounding Gate Nanoscale MOSFETs for High Speed Wireless Communication

다국어 초록 (Multilingual Abstract)

A new two dimensional (2-D) analytical model for the Threshold Voltage on dual material surrounding gate (DMSG) MOSFETs is presented in this paper. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expression for the threshold voltage and subthreshold swing is derived. It is seen that short channel effects (SCEs) in this structure is suppressed because of the perceivable step in the surface potential which screens the drain potential. We demonstrate that the proposed model exhibits significantly reduced SCEs, thus make it a more reliable device configuration for high speed wireless communication than the conventional single material surrounding gate (SMSG) MOSFETs.

목차 (Table of Contents)

• Abstract
• Ⅰ. INTRODUCTION
• Ⅱ. THEORETICAL MODEL
• Ⅲ. RESULTS AND DISCUSSIONS
• Ⅳ. CONCLUSIONS
• REFERENCES

참고문헌 (Reference)

1 M. J. Kumar, "New dual-material Surrounding gate Nanoscale MOSFET: Analytical Threshold-voltage model" 53 (53): 920-923, 2006

2 A.Chaudhry, "Controlling shortchannel effect in deep- submicron SOI MOSFETs for improved reliability: A review" 4 (4): 99-109, 2006

3 K. Suzuki, "Analytical threshold voltage model for short channel Double Gate MOSFETs" 43 : 732-738, 1996

4 S. H.Oh, "Analytical description of short- channel effects in fully depleted Double gate and cylindrical surroundinggate MOSFETs" 21 (21): 445-447, 2000

5 Young K. K, "Analysis of conduction in fully depleted SOI MOSFETs" 36 (36): 504-506, 1989

6 N. B. Balamurugan, "A New Scaling Theory for the Effective Conducting Path Effect of Dual Material Surrounding Gate Nanoscale MOSFETs" 대한전자공학회 8 (8): 92-97, 2008