<P>This letter examined the use of a patterned ion-damaged current blocking layer (patterned-IDCBL). A 50-Å-InGaN layer grown as the top epitaxial layer was transformed into an insulator fabricated by oxygen plasma treatment, in which the...
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https://www.riss.kr/link?id=A107735608
2015
-
SCOPUS,SCIE
학술저널
149-152(4쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>This letter examined the use of a patterned ion-damaged current blocking layer (patterned-IDCBL). A 50-Å-InGaN layer grown as the top epitaxial layer was transformed into an insulator fabricated by oxygen plasma treatment, in which the...
<P>This letter examined the use of a patterned ion-damaged current blocking layer (patterned-IDCBL). A 50-Å-InGaN layer grown as the top epitaxial layer was transformed into an insulator fabricated by oxygen plasma treatment, in which the dot patterns are regularly arranged over the active areas of the light-emitting diode (LED) and inserted beneath the p-electrode. The results showed that the light output power increased by 16.8% at 60 mA compared with the conventional LEDs, and that the electrostatic discharge resistance is effectively improved by the patterned-IDCBL.</P>