Gas Molecular Adsorption and Surface Cleansing Effects on the Electrical Properties in ZnO Nanowire Field Effect Transistors

다국어 초록 (Multilingual Abstract)

We fabricated field effect transistors by using high quality
single-crystalline ZnO nanowires and studied their electrical
properties by gas adsorption. We measured the changes in the
electrical properties due to the surface absorbed OH or O$_2$ from
the ambient air. A rapid change in the threshold voltage of the gate
response curve in the high vacuum region has been reproducibly
observed. This change suggests that the adsorption mechanism may be
different in the low and the high vacuum regions. By introducing
reactive gas molecules to the surface of the nanowire channel in the
high vacuum condition \textit{via} a mass flow controller, we could
tune the number of carriers. We then obtained optimally-doped
devices from the heavily-doped ones. We also developed an
\textit{effective} surface cleansing procedure to enrich the
electrical properties of pristine devices significantly by the
introducing high-purity O$_2$ gas under high vacuum conditions.

참고문헌 (Reference)

1 L. I. Berger, "Semiconductor Materials" CRC Press 1997

2 T. Wolkenstein, "Electronic Processes on SemiconductorSurfaces during Chemisorption edited by R. Morrison" 35-, 1991

3 V. F. Kiselev, "Electronic Phenomenain Adsorption and Catalysis on Semiconductors and Di-electrics" 92-, 1987