Tunable multi-quantum dots in InAs nanowires: Building Blocks for Su-Schrieffer-Heeger Topological Chains = InAs 나노와이어의 조정 가능한 다중 양자점: Su-Schrieffer-Heeger 위상적 사슬을 위한 기초 구성 요소

목차 (Table of Contents)

• List of Contents
• Abstract i
• List of contents ii
• List of figures V
• Ⅰ. Theoretical Background
• 1.1 Su-Schrieffer-Heeger (SSH) model 3
• 1.2 Quantum dots 10
• 1.2.1 Indium Arsenide (InAs) nanowire single-electron transistor 10
• 1.2.2 Single quantum dot 11
• 1.2.3 Double quantum dot 14
• 1.2.4 Quadruple quantum dot 19
• 1.3 Superconducting coplanar waveguide (SCPW) resonators 21
• 1.3.1 Microwave theory of transmission lines 22
• 1.3.2 Superconducting microwave resonators 24
• 1.3.3 Norton equivalent circuit 26
• 1.3.4 Quality factors of the resonator 28
• 1.3.5 Transmission coefficient 30
• II. Fabrication
• 2.1 InAs nanowire single-electron transistor 32
• 2.1.1 Nanowire transfer and etching process 32
• 2.1.2 DC Device Fabrication 34
• 2.2 Nb Superconducting coplanar waveguide (SCPW) resonator 35
• 2.2.1 Coplanar waveguide resonator geometry 35
• 2.2.2 RF Device Fabrication 36
• III. Measurement Techniques
• 3.1 Initial Characterization and Sample Preparation 39
• 3.2 Measurement Schematic 41
• 3.3 Low Temperature Measurement Setup 42
• 3.4 He-3 Refrigeration System 44
• IV. Experiments Results
• 4.1 Multi-quantum dot (DC Device) Results 46
• 4.1.1 Single quantum dots 46
• 4.1.2 Double quantum dots 49
• 4.1.3 Triple quantum dot 51
• 4.1.4 Quadruple quantum dot 53
• 4.2 SCPW resonator (RF Device) Results 59
• 4.2.1 Characteristics of the RF Device 59
• 4.2.2 Interaction between the transistor and the resonator 62
• V. Summary and Conclusion 64
• Bibliography 65
• Appendix
• Fabrication Details and Recipes
• A1. Wafer Characteristics of DC device
• A2. Photo pad Fabrication
• A3. Wafer Characteristics of RF device
• A4. Resonator fabrication for measurements
• A5. InAs transistor fabrication (DC & RF device)
• A6. Designing using K-Layout and Layout Editor
• Pre-Cooldown Sample Preparation
• B1. Wire bonding
• B2. He-3 Sample Exchange Procedure (Unloading and loading Sample)
• Korean Summary 80