Ni‐based intermetallics are promising materials for forming efficient contacts in GeSn‐based Si photonic devices. However, the role that Sn might have during the Ni/GeSn solid‐state reaction (SSR) is not fully understood. A comprehensive analysi...
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https://www.riss.kr/link?id=O113196527
2020년
-
0021-8898
1600-5767
SCI;SCIE;SCOPUS
학술저널
605-613 [※수록면이 p5 이하이면, Review, Columns, Editor's Note, Abstract 등일 경우가 있습니다.]
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
Ni‐based intermetallics are promising materials for forming efficient contacts in GeSn‐based Si photonic devices. However, the role that Sn might have during the Ni/GeSn solid‐state reaction (SSR) is not fully understood. A comprehensive analysi...
Ni‐based intermetallics are promising materials for forming efficient contacts in GeSn‐based Si photonic devices. However, the role that Sn might have during the Ni/GeSn solid‐state reaction (SSR) is not fully understood. A comprehensive analysis focused on Sn segregation during the Ni/GeSn SSR was carried out. In situ X‐ray diffraction and cross‐section transmission electron microscopy measurements coupled with energy‐dispersive X‐ray spectrometry and electron energy‐loss spectroscopy atomic mappings were performed to follow the phase sequence, Sn distribution and segregation. The results showed that, during the SSR, Sn was incorporated into the intermetallic phases. Sn segregation happened first around the grain boundaries (GBs) and then towards the surface. Sn accumulation around GBs hampered atom diffusion, delaying the growth of the Ni(GeSn) phase. Higher thermal budgets will thus be mandatory for formation of contacts in high‐Sn‐content photonic devices, which could be detrimental for thermal stability.
A comprehensive analysis focused on Sn segregation during the Ni/GeSn solid‐state reaction was carried out. It was demonstrated that Sn is soluble in the various Ni/GeSn intermetallic phases and that, when the temperature increases, the Sn segregation occurs first at grain boundaries, which can hamper Ni diffusion and delay the intermetallic formation.
X‐ray ptychographic mode of self‐assembled CdSe/CdS octapod‐shaped nanocrystals in thick polymers