N형 Ge-on-Si 기판에 형성된 Pd Germanide의 열안정성 및 Schottky 장벽 분석 = Analysis of Thermal Stability and Schottky Barrier Height of Pd Germanide on N-type Ge-on-Si Substrate

다국어 초록 (Multilingual Abstract)

In this paper, thermal stability of palladium germanide (Pd germanide) is analyzed for high performance Schottky barrier germanium metal oxide semiconductor field effect transistors (SB Ge-MOSFETs). Pd germanide Schottky barrier diodes were fabricated on n-type Ge-on-Si substrates and the formed Pd germanide shows thermal immunity up to $450^{\circ}C$. The barrier height of Pd germanide is also characterized using two methods. It is shown that Pd germanide contact has electron Schottky barrier height of 0.569~0.631 eV and work function of 4.699~4.761 eV, respectively. Pd germanide is promising for the nanoscale Schottky barrier Ge channel MOSFETs.

참고문헌 (Reference)

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