The donor bound exciton states in wurtzite GaN quantum dot

다국어 초록 (Multilingual Abstract)

Based on the effective mass approximation, the donor bound exciton states in a wurtzite (WZ) GaN/AlGaN quantum dot (QD) are
investigated by means of a variational method, including the strong built-in electric field effect due to the spontaneous and piezoelectric
polarizations. Numerical results show that the donor bound exciton binding energy is highly dependent on the impurity position and QD
size. In particular, we find that the donor bound exciton binding energy is insensitive to dot height when the impurity is located at the
right boundary of the WZ GaN/AlGaN QD with large dot height.

다국어 초록 (Multilingual Abstract)

Based on the effective mass approximation, the donor bound exciton states in a wurtzite (WZ) GaN/AlGaN quantum dot (QD) are
investigated by means of a variational method, including the strong built-in electric field effect due to the spontaneous and piezoelectric
polarizations. Numerical results show that the donor bound exciton binding energy is highly dependent on the impurity position and QD
size. In particular, we find that the donor bound exciton binding energy is insensitive to dot height when the impurity is located at the
right boundary of the WZ GaN/AlGaN QD with large dot height.

참고문헌 (Reference)

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