<P>On a single ZnO nanowire (NW), we fabricated an inverter-type device comprising a Schottky diode (SD) and field-effect transistor (FET), aiming at 1-dimensional (1D) electronic circuits with low power consumption. The SD and adjacent FET work...
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https://www.riss.kr/link?id=A107642652
2014
-
SCI,SCIE,SCOPUS
학술저널
16367-16372(6쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>On a single ZnO nanowire (NW), we fabricated an inverter-type device comprising a Schottky diode (SD) and field-effect transistor (FET), aiming at 1-dimensional (1D) electronic circuits with low power consumption. The SD and adjacent FET work...
<P>On a single ZnO nanowire (NW), we fabricated an inverter-type device comprising a Schottky diode (SD) and field-effect transistor (FET), aiming at 1-dimensional (1D) electronic circuits with low power consumption. The SD and adjacent FET worked respectively as the load and driver, so that voltage signals could be easily extracted as the output. In addition, NW FET with a transparent conducting oxide as top gate turned out to be very photosensitive, although ZnO NW SD was blind to visible light. Based on this, we could achieve an array of photo-inverter cells on one NW. Our non-classical inverter is regarded as quite practical for both logic and photo-sensing due to its performance as well as simple device configuration.</P>
<P>Graphic Abstract</P><P>On a single ZnO nanowire, we fabricated bifunctional non-classical inverters coupling nanowire-based Schottky barrier transistors and adjacent Schottky diodes.
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