n-CdS/p-Si Juntion structure was fabricated by magnetron sputtering method of a target source of CdS and Boron dopped p-Si prime single cristal wafers annealed at a temperature of 200℃ by evaporator's heater. An annealing process where the sample wa...
n-CdS/p-Si Juntion structure was fabricated by magnetron sputtering method of a target source of CdS and Boron dopped p-Si prime single cristal wafers annealed at a temperature of 200℃ by evaporator's heater. An annealing process where the sample was heated 250℃ to 400℃ on 4 steps in ambient N₂ for 3min by RTP( Rapid Thermal Processing). Annealing the CdS layers canbe benefitial in terms of the layer electrical properties. A CdS layer thickness and annealed temperature affecting the electrical characteristics were investigated the open voltage factor Measured by Optical Measurement Probe Station.