RISS 학술연구정보서비스

검색
다국어 입력

http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.

변환된 중국어를 복사하여 사용하시면 됩니다.

예시)
  • 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
  • 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
닫기
    인기검색어 순위 펼치기

    RISS 인기검색어

      KCI등재 SCIE SCOPUS

      Study on the Nonlinear Output Characteristic of Tunnel Field-effect Transistor

      한글로보기

      https://www.riss.kr/link?id=A106817993

      • 0

        상세조회
      • 0

        다운로드
      서지정보 열기
      • 내보내기
      • 내책장담기
      • 공유하기
      • 오류접수

      부가정보

      다국어 초록 (Multilingual Abstract)

      This paper investigates the output characteristics in tunnel field-effect transistor (TFET). The nonlinear current (NLC) in output characteristics has remained as a critical issue for operating at low drain bias (VDS). In this paper, the energy band d...

      This paper investigates the output characteristics in tunnel field-effect transistor (TFET). The nonlinear current (NLC) in output characteristics has remained as a critical issue for operating at low drain bias (VDS). In this paper, the energy band diagrams and charge density distributions are analyzed to confirm the relation between output current and VDS, based on the technology computer-aided design (TCAD) simulations. Then, the NLC is analyzed as a channel potential pinning which occurs from the charges supplied from the drain to the channel.

      더보기

      목차 (Table of Contents)

      • Abstract
      • I. INTRODUCTION
      • II. DEVICE AND SIMULATION
      • III. RESULTS AND DISCUSSION
      • V. CONCLUSION
      • Abstract
      • I. INTRODUCTION
      • II. DEVICE AND SIMULATION
      • III. RESULTS AND DISCUSSION
      • V. CONCLUSION
      • REFERENCES
      더보기

      참고문헌 (Reference)

      1 Woo Young Choi, "Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec" Institute of Electrical and Electronics Engineers (IEEE) 28 (28): 743-745, 2007

      2 Evan O. Kane, "Theory of Tunneling" AIP Publishing 32 (32): 83-91, 1961

      3 Arnab Biswas, "TCAD simulation of SOI TFETs and calibration of non-local band-to-band tunneling model" Elsevier BV 98 : 334-337, 2012

      4 S. Dash, "Subthreshold swing minimization of cylindrical tunnel FET using binary metal alloy gate" 91 : 105-111, 2016

      5 S. Safa, "Simulation-based study on the effect of inversion charge layer on triple material double gate Tunnel FET" 329-332, 2016

      6 "Sentaurus Device User Guide, ver. G-2012.06"

      7 S. W. Kim, "Investigation on hump effects of L-shaped tunneling filed-effect transistors" 1-2, 2012

      8 Woojun Lee, "Influence of Inversion Layer on Tunneling Field-Effect Transistors" Institute of Electrical and Electronics Engineers (IEEE) 32 (32): 1191-1193, 2011

      9 Nilay Dagtekin, "Impact of Super-Linear Onset, Off-Region Due to Uni-Directional Conductance and Dominant $\mathrm{C}_{\text {GD}}$ on Performance of TFET-Based Circuits" Institute of Electrical and Electronics Engineers (IEEE) 3 (3): 233-239, 2015

      10 A. Mishra, "Double gate vertical tunnel FET for hybrid CMOS-TFET based low standby power logic circuits" 1-4, 2013

      1 Woo Young Choi, "Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec" Institute of Electrical and Electronics Engineers (IEEE) 28 (28): 743-745, 2007

      2 Evan O. Kane, "Theory of Tunneling" AIP Publishing 32 (32): 83-91, 1961

      3 Arnab Biswas, "TCAD simulation of SOI TFETs and calibration of non-local band-to-band tunneling model" Elsevier BV 98 : 334-337, 2012

      4 S. Dash, "Subthreshold swing minimization of cylindrical tunnel FET using binary metal alloy gate" 91 : 105-111, 2016

      5 S. Safa, "Simulation-based study on the effect of inversion charge layer on triple material double gate Tunnel FET" 329-332, 2016

      6 "Sentaurus Device User Guide, ver. G-2012.06"

      7 S. W. Kim, "Investigation on hump effects of L-shaped tunneling filed-effect transistors" 1-2, 2012

      8 Woojun Lee, "Influence of Inversion Layer on Tunneling Field-Effect Transistors" Institute of Electrical and Electronics Engineers (IEEE) 32 (32): 1191-1193, 2011

      9 Nilay Dagtekin, "Impact of Super-Linear Onset, Off-Region Due to Uni-Directional Conductance and Dominant $\mathrm{C}_{\text {GD}}$ on Performance of TFET-Based Circuits" Institute of Electrical and Electronics Engineers (IEEE) 3 (3): 233-239, 2015

      10 A. Mishra, "Double gate vertical tunnel FET for hybrid CMOS-TFET based low standby power logic circuits" 1-4, 2013

      11 Pengyu Long, "Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs" Institute of Electrical and Electronics Engineers (IEEE) 37 (37): 107-110, 2016

      12 Y. Zhong, "Current Degradation and Delay Analysis of Series-Connected Circuits Based on Novel TFET Design" 1-3, 2018

      13 J. Knoch, "Chapter Eight - nanowire tunneling field-effect transistors" 94 : 273-295, 2015

      14 Pei-Yu Wang, "Band Engineering to Improve Average Subthreshold Swing by Suppressing Low Electric Field Band-to-Band Tunneling With Epitaxial Tunnel Layer Tunnel FET Structure" Institute of Electrical and Electronics Engineers (IEEE) 15 (15): 74-79, 2016

      15 Rajat Vishnoi, "An Accurate Compact Analytical Model for the Drain Current of a TFET From Subthreshold to Strong Inversion" Institute of Electrical and Electronics Engineers (IEEE) 62 (62): 478-484, 2015

      16 C. Usha, "A tunneling FET exploiting in various structures and different models: A review" 1-6, 2015

      더보기

      동일학술지(권/호) 다른 논문

      분석정보

      View

      상세정보조회

      0

      Usage

      원문다운로드

      0

      대출신청

      0

      복사신청

      0

      EDDS신청

      0

      동일 주제 내 활용도 TOP

      더보기

      주제

      연도별 연구동향

      연도별 활용동향

      연관논문

      연구자 네트워크맵

      공동연구자 (7)

      유사연구자 (20) 활용도상위20명

      인용정보 인용지수 설명보기

      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2023 평가예정 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
      2020-01-01 평가 등재학술지 유지 (해외등재 학술지 평가) KCI등재
      2014-01-21 학회명변경 영문명 : The Institute Of Electronics Engineers Of Korea -> The Institute of Electronics and Information Engineers KCI등재
      2010-11-25 학술지명변경 한글명 : JOURNAL OF SEMICONDUTOR TECHNOLOGY AND SCIENCE -> JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE KCI등재
      2010-01-01 평가 등재학술지 선정 (등재후보2차) KCI등재
      2009-01-01 평가 등재후보 1차 PASS (등재후보1차) KCI등재후보
      2007-01-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
      더보기

      학술지 인용정보

      학술지 인용정보
      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 0.42 0.13 0.35
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.3 0.29 0.308 0.03
      더보기

      이 자료와 함께 이용한 RISS 자료

      나만을 위한 추천자료

      해외이동버튼