Source and Drain Formation by Using Plasma Doping and Laser Melt Annealing Technique for Deca-Nanometer SOI MOSFETs

다국어 초록 (Multilingual Abstract)

The degradation of the carrier mobility in the channel region due
to the high dopant scattering becomes a big issue in
deca-nanometer MOSFET technology. Besides, the random locations of
dopants cause serious threshold voltage variations in such small
devices. Thus, fabrication of deca-nanometer size devices without
channel doping is highly sought nowadays. In this paper we
propose a novel fabrication method for ultra-thin SOI MOSFETs with
plasma doping followed by excimer laser annealing as one of the
promising candidates to achieve this goal.