1 S. Iijima, 354 : 56-, 1991
2 J. Guo, 80 : 3192-, 2002
3 A. Aouaj, 2009
4 A. Raychowdhury, 12 : 1411-, 2004
5 I. O’Connor, 54 : 365-, 2007
6 A. Raychowdhury, 23 : 1415-, 2004
7 J. W. Mintmire, 81 : 2506-, 1998
8 F. Pregaldiny, 2006
9 "Nanohub on line simulation and more (on line)"
10 홍신남, "Investigation of the Ru-Zr Metal Alloy for Use as a Gate Electrode in NMOS Devices" 한국물리학회 56 (56): 1497-1499, 2010
1 S. Iijima, 354 : 56-, 1991
2 J. Guo, 80 : 3192-, 2002
3 A. Aouaj, 2009
4 A. Raychowdhury, 12 : 1411-, 2004
5 I. O’Connor, 54 : 365-, 2007
6 A. Raychowdhury, 23 : 1415-, 2004
7 J. W. Mintmire, 81 : 2506-, 1998
8 F. Pregaldiny, 2006
9 "Nanohub on line simulation and more (on line)"
10 홍신남, "Investigation of the Ru-Zr Metal Alloy for Use as a Gate Electrode in NMOS Devices" 한국물리학회 56 (56): 1497-1499, 2010
11 김상기, "High-density Nano-scale N-channel Trench-gated MOSFETs Using the Self-aligned Technique" 한국물리학회 57 (57): 802-805, 2010