We studied the synthesis and patterning results of small molecular resists (dendritic octa phenol (dOPhOH)) with high glass transition temperatures based on the advantage of high T<sub>g</sub> like poly(4-hydroxystyrene) as a photoresist. ...
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https://www.riss.kr/link?id=A107409268
2021
English
학술저널
82-82(1쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
We studied the synthesis and patterning results of small molecular resists (dendritic octa phenol (dOPhOH)) with high glass transition temperatures based on the advantage of high T<sub>g</sub> like poly(4-hydroxystyrene) as a photoresist. ...
We studied the synthesis and patterning results of small molecular resists (dendritic octa phenol (dOPhOH)) with high glass transition temperatures based on the advantage of high T<sub>g</sub> like poly(4-hydroxystyrene) as a photoresist. The high T<sub>g</sub> plays a key role in increasing the resolution by inhibiting the diffusion of the acid catalyst in the chemical-amplified photoresist system. By comparing the degree of acid diffusion with a dendritic hexaphenol (dHPhOH) derivative similar with dOPhOH, it was confirmed that the diffusion characteristics were significantly lower at the same temperature. Based on the results, a 50 nm pattern was formed under electron-beam lithography conditions. In addition, by introducing a perfluoroalkyl ether chain (PFAE), it was confirmed that radical-induced cross-linking reaction is possible, and a negative type pattern was implemented. Small molecules with high T<sub>g</sub> are expected to be applied as photoresists useful for realizing high resolution lithography.
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