High-Quality Solution-Processed Metal-Oxide Gate Dielectrics Realized With a Photo-Activated Metal-Oxide Nanocluster Precursor

다국어 초록 (Multilingual Abstract)

<P>High-quality solution-derived amorphous alumina ( <TEX>${a}$</TEX>-Al<SUB>2</SUB>O<SUB>3</SUB>) dielectric has been achieved with [Al <TEX>$_{\textsf {13}}{(}\mu _{\textsf {3}}$</TEX>-OH <TEX>${)}_{\textsf {6}}{(}\mu $</TEX>-OH)<SUB>18</SUB> (H<SUB>2</SUB>O)<SUB>24</SUB>](NO<SUB>3</SUB>)<SUB>15</SUB>(Al-13 nanocluster) as a precursor and a local structure-controllable activation process via deep-UV-induced photochemical activation. The synergetic combination of an Al-13 nanocluster precursor and high-energetic photochemical activation enables the formation of highly dense <TEX>${a}$</TEX>-Al<SUB>2</SUB>O<SUB>3</SUB> thin films <I>via</I> an efficient dissociation and rearrangement of the nanocluster skeleton. The electrical characteristics of the nanocluster-based <TEX>${a}$</TEX>-Al<SUB>2</SUB>O<SUB>3</SUB> thin films were investigated in terms of their operative electronic conduction mechanism by comparing conventional nitrate-based and vacuum-deposited films. From these results, it was found that the leakage current density of solution-processed <TEX>${a}$</TEX>-Al<SUB>2</SUB>O<SUB>3</SUB> layers is largely affected by their precursor structures. Finally, to demonstrate the versatility of the high-quality nanocluster-based <TEX>${a}$</TEX>-Al<SUB>2</SUB>O<SUB>3</SUB> dielectrics, carbon nanotube and metal-oxide thin-film transistors were fabricated on low thermal budget stretchable and rigid substrates, respectively.</P>