On the Etching Mechanism of Parylene-C in Inductively Coupled O₂ Plasma

다국어 초록 (Multilingual Abstract)

We report results on a study of inductively coupled plasma (ICP) etching of Parylene-C (poly-monochloro-para-xylylene) films using an O₂ gas. Effects of process parameters on etch rates were investigated and are discussed in this article from the standpoint of plasma parameter measurements, performed using a Langmuir probe and modeling calculation. Process parameters of interest include ICP source power and pressure. It was shown that major etching agent of polymer films was oxygen atoms O(³P). At the same time it was proposed that positive ions were not effective etchant, but ions played an important role as effective channel of energy transfer from plasma towards the polymer.

참고문헌 (Reference)

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