This study described the effects of RF power, DC bias voltage, chamber pressure and gas mixing ratio on the etch rates of TiN thin film and selectivity of TiN thin film to SiO₂ with BCl₃/Ar gas mixture. When the gas mixing ratio was BCl₃(20%)/Ar...
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https://www.riss.kr/link?id=A76181654
2008
Korean
KCI등재
학술저널
83-87(5쪽)
0
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
This study described the effects of RF power, DC bias voltage, chamber pressure and gas mixing ratio on the etch rates of TiN thin film and selectivity of TiN thin film to SiO₂ with BCl₃/Ar gas mixture. When the gas mixing ratio was BCl₃(20%)/Ar...
This study described the effects of RF power, DC bias voltage, chamber pressure and gas mixing ratio on the etch rates of TiN thin film and selectivity of TiN thin film to SiO₂ with BCl₃/Ar gas mixture. When the gas mixing ratio was BCl₃(20%)/Ar(80%) with other conditions were fixed, the maximum etch rate of TiN thin film was 170.6 nm/min. When the DC bias voltage increased from ?50 V to ?200 V, the etch rate of TiN thin film increased from 15 ㎚/min to 452 ㎚/min. As the RF power increased and chamber pressure decreased, the etch rate of TiN thin film showed an increasing tendency. When the gas mixing ratio was BCl₃(20%)/Ar(80%) under others conditions were fixed, the intensity of optical emission spectra from radical or ion such as Ar(750.4 ㎚), Cl?(481.9 ㎚) and Cl²?(460.8 nm) was highest. The TiN thin film was effectively removed by the chemically assisted physical etching in BCl₃/Ar ICP plasma.
목차 (Table of Contents)
참고문헌 (Reference)
1 A. L. Gouil, 25 : 767-778, 2007
2 김관하, 5 (5): 349-354, 2007
3 W. T. Chang, 25 : 1265-1269, 2007
4 W. S. Hwang, 23 (23): 964-970, 2005
5 I. M. Dharmadasa, 10 : 369-372, 1995
6 H. K. Kim, 447-448 : 90-94, 2004
7 B. Y. Jeong, 38 (38): 823-828, 2000
8 J. W. Lee, 48 : 189-192, 2004
9 A. Pastol, 23 : 799-805, 1990
10 J. W. Lee, 233 (233): 402-410, 2004
1 A. L. Gouil, 25 : 767-778, 2007
2 김관하, 5 (5): 349-354, 2007
3 W. T. Chang, 25 : 1265-1269, 2007
4 W. S. Hwang, 23 (23): 964-970, 2005
5 I. M. Dharmadasa, 10 : 369-372, 1995
6 H. K. Kim, 447-448 : 90-94, 2004
7 B. Y. Jeong, 38 (38): 823-828, 2000
8 J. W. Lee, 48 : 189-192, 2004
9 A. Pastol, 23 : 799-805, 1990
10 J. W. Lee, 233 (233): 402-410, 2004
11 G. H. Kim, 475 (475): 86-90, 2005
12 염근영, "플라즈마 식각기술" 미래컴 384-391, 2006
13 D. R. Lide, "Handbook of Chemistry and Physics" CRC Press 10(3)-10(15), 2004
Ion beam assisted DC magnetron sputtering에 의한 렌즈 유리 성형용 WC 합금의 Ir-Re 박막 특성
마그네트론 음극의 자석 배열에 따른 방전의 형상 변화 연구
OLED 소자의 특성에 미치는 밀봉 버퍼용 고분자박막의 영향
고강도 Al-Zn-Mg-Cu 합금에서 조성에 따른 응력부식균열 특성
학술지 이력
연월일 | 이력구분 | 이력상세 | 등재구분 |
---|---|---|---|
2026 | 평가예정 | 재인증평가 신청대상 (재인증) | |
2022-01-28 | 학술지명변경 | 외국어명 : Journal of The Korean Institute of Surface Engineering -> Journal of Surface Science and Engineering | |
2020-01-01 | 평가 | 등재학술지 유지 (재인증) | |
2017-01-01 | 평가 | 등재학술지 유지 (계속평가) | |
2013-01-01 | 평가 | 등재 1차 FAIL (등재유지) | |
2010-01-01 | 평가 | 등재학술지 유지 (등재유지) | |
2008-01-01 | 평가 | 등재학술지 유지 (등재유지) | |
2005-01-01 | 평가 | 등재학술지 선정 (등재후보2차) | |
2004-01-01 | 평가 | 등재후보 1차 PASS (등재후보1차) | |
2003-01-01 | 평가 | 등재후보학술지 유지 (등재후보1차) | |
2002-01-01 | 평가 | 등재후보 1차 FAIL (등재후보1차) | |
1999-07-01 | 평가 | 등재후보학술지 선정 (신규평가) |
학술지 인용정보
기준연도 | WOS-KCI 통합IF(2년) | KCIF(2년) | KCIF(3년) |
---|---|---|---|
2016 | 0.49 | 0.49 | 0.39 |
KCIF(4년) | KCIF(5년) | 중심성지수(3년) | 즉시성지수 |
0.36 | 0.34 | 0.411 | 0.16 |