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https://www.riss.kr/link?id=O37471284
Parthasarathy, V. ; Zhu, R. ; Ger, M. L. ; Khemka, V. ; Bose, A. ; Baird, R. ; Roggenbauer, T. ; Collins, D. ; Chang, S. ; Hui, P.
2000년
eng
학술저널
PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS- IEEE
317-322 [※수록면이 p5 이하이면, Review, Columns, Editor's Note, Abstract 등일 경우가 있습니다.]
0780362705
Power semiconductor devices and ICs; ISPSD 2000
International symposium; 12th
Toulouse, France
2000; May
0
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Progress in Wide Bandgap Semiconductor SiC for Power Devices
Beyond Y2K: Technology Convergence as a Driver of Future Low-Voltage Power Management Semiconductors
IEGT design concept against operation instability and its impact to application