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      KCI등재 SCOPUS SCIE

      Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition

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      https://www.riss.kr/link?id=A104238910

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      다국어 초록 (Multilingual Abstract)

      We report the permeation barrier properties of Al2O3/ZrO2 multi-layers deposited by remote plasma atomic layer deposition. Electrical Ca degradation tests were performed to derive the water vapor transmission rate (WVTR) of Al2O3, ZrO2 and Al2O3/ZrO2 multi-layers at 50 C and 50% relative humidity (RH). Al2O3/ZrO2 multi-layers exhibit better barrier properties than Al2O3 and ZrO2 layers, and when more individual layers were deposited in the same total thickness, the WVTR value was reduced further, indicating a better barrier property. The WVTR of the Al2O3 and ZrO2 layers were 9.5 103 and 1.6 102 g/m2 day, respectively, but when deposited alternatively with 1 cycle of each layer, the WVTR decreased to 9.9 104 g/m2 day. X-ray diffraction results indicated that ZrO2 has a monoclinic structure but Al2O3 and Al2O3/ZrO2 multi-layers show an amorphous structure. Cross sectional Al2O3/ZrO2 multilayer structures and the formation of a ZrAlxOy phase are observed by transmission electron microscopy (TEM). X-ray photoelectron spectrometry (XPS) results indicate that Al2O3 and ZrO2 contain 33.7% and 37.8%, respectively, AleOH and ZreOH bonding. However, the ZrAlxOy phase contained 30.5% AleOH and ZreOH bonding. The results of transmittance measurement indicate that overall, Al2O3, ZrO2 and Al2O3/ ZrO2 multi-layers show high transmittance greater than 80% in the visible region.
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      We report the permeation barrier properties of Al2O3/ZrO2 multi-layers deposited by remote plasma atomic layer deposition. Electrical Ca degradation tests were performed to derive the water vapor transmission rate (WVTR) of Al2O3, ZrO2 and Al2O3/ZrO2 ...

      We report the permeation barrier properties of Al2O3/ZrO2 multi-layers deposited by remote plasma atomic layer deposition. Electrical Ca degradation tests were performed to derive the water vapor transmission rate (WVTR) of Al2O3, ZrO2 and Al2O3/ZrO2 multi-layers at 50 C and 50% relative humidity (RH). Al2O3/ZrO2 multi-layers exhibit better barrier properties than Al2O3 and ZrO2 layers, and when more individual layers were deposited in the same total thickness, the WVTR value was reduced further, indicating a better barrier property. The WVTR of the Al2O3 and ZrO2 layers were 9.5 103 and 1.6 102 g/m2 day, respectively, but when deposited alternatively with 1 cycle of each layer, the WVTR decreased to 9.9 104 g/m2 day. X-ray diffraction results indicated that ZrO2 has a monoclinic structure but Al2O3 and Al2O3/ZrO2 multi-layers show an amorphous structure. Cross sectional Al2O3/ZrO2 multilayer structures and the formation of a ZrAlxOy phase are observed by transmission electron microscopy (TEM). X-ray photoelectron spectrometry (XPS) results indicate that Al2O3 and ZrO2 contain 33.7% and 37.8%, respectively, AleOH and ZreOH bonding. However, the ZrAlxOy phase contained 30.5% AleOH and ZreOH bonding. The results of transmittance measurement indicate that overall, Al2O3, ZrO2 and Al2O3/ ZrO2 multi-layers show high transmittance greater than 80% in the visible region.

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      참고문헌 (Reference)

      1 S. Reineke, "White organic light-emitting diodes with fluorescent tube efficiency" 459 : 234-, 2009

      2 S.H.K. Park, "Ultrathin film encapsulation of an OLED by ALD, Electrochem" 8 : H21-H23, 2005

      3 J.S. Lewis, "Thin-film permeation-barrier technology for flexible organic light-emitting devices" 10 : 45-57, 2004

      4 A.P. Ghosh, "Thin-film encapsulation of organic light-emitting devices" 86 : 2005

      5 Zhao Sha, "The Characterization of ZrO2 Films with Di??erent Substrate Bias Voltages" 한국물리학회 46 (46): 70-74, 2005

      6 D. M. Hausmann, "Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films" 249 : 251-261, 2003

      7 S. M. George, "Surface chemistry for atomic layer growth" 100 : 13121-13131, 1996

      8 P. E. Burrows, "Reliability and degradation of organic light-emitting devices" 65 : 2922-2924, 1994

      9 A. C. Mayer, "Polymerbased solar cells" 10 : 28-33, 2007

      10 E. Langereis, "Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers" 89 : 2006

      1 S. Reineke, "White organic light-emitting diodes with fluorescent tube efficiency" 459 : 234-, 2009

      2 S.H.K. Park, "Ultrathin film encapsulation of an OLED by ALD, Electrochem" 8 : H21-H23, 2005

      3 J.S. Lewis, "Thin-film permeation-barrier technology for flexible organic light-emitting devices" 10 : 45-57, 2004

      4 A.P. Ghosh, "Thin-film encapsulation of organic light-emitting devices" 86 : 2005

      5 Zhao Sha, "The Characterization of ZrO2 Films with Di??erent Substrate Bias Voltages" 한국물리학회 46 (46): 70-74, 2005

      6 D. M. Hausmann, "Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films" 249 : 251-261, 2003

      7 S. M. George, "Surface chemistry for atomic layer growth" 100 : 13121-13131, 1996

      8 P. E. Burrows, "Reliability and degradation of organic light-emitting devices" 65 : 2922-2924, 1994

      9 A. C. Mayer, "Polymerbased solar cells" 10 : 28-33, 2007

      10 E. Langereis, "Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers" 89 : 2006

      11 R. Paetzold, "Permeation rate measurements by electrical analysis of calcium corrosion" 74 : 5147-5150, 2003

      12 S.W. Seo, "Optimization of Al2O3/ZrO2 nanolaminate structure for thin-film encapsulation of OLEDs" 13 : 2436-2441, 2012

      13 H. Choi, "Moisture barrier properties of Al2O3 films deposited by remote plasma atomic layer deposition at low temperatures" 52 : 2013

      14 C. Zhao, "Miscibility of amorphous ZrO2eAl2O3binary alloy" 80 : 2374-2376, 2002

      15 G. L. Graff, "Mechanisms of vapor permeation through multilayer barrier films : lag time versus equilibrium permeation" 96 : 1840-1849, 2004

      16 A. A. Dameron, "George, Gas diffusion barriers on polymers using multilayers fabricated by Al2O3 and rapid SiO2 atomic layer deposition" 112 : 4573-4580, 2008

      17 P.F. Carcia, "Gas diffusion ultrabarriers on polymer substrates using Al2O3 atomic layer deposition and SiN plasma-enhanced chemical vapor deposition" 106 : 2009

      18 J.H. Choi, "Evaluation of gas permeation barrier properties using electrical measurements of calcium degradation" 78 : 2007

      19 C. Zhao, "Crystallisation and tetragonalmonoclinic transformation in ZrO2 and HfO2 dielectric thin films" 206 (206): 1285-1288, 2002

      20 H. Shimizu, "Characterization of solegel derived and crystallized ZrO2 thin films" 48 : 2009

      21 J. Kim, "Characteristics of HfO2 thin films grown by plasma atomic layer deposition" 87 : 2005

      22 P.F. Carcia, "Ca test of Al2O3gas diffusion barriers grown by atomic layer deposition on polymers" 89 : 2006

      23 M. Leskela, "Atomic layer deposition chemistry: recent developments and future challenges" 42 : 5548-5554, 2003

      24 J. Meyer, "Al2O3/ZrO2 nanolaminates as ultrahigh gas-diffusion barriers-a strategy for reliable encapsulation of organic electronics" 21 : 1845-, 2009

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