p-Si(100) 기판상에 스퍼터된 n+ Si층이 형성된 pn 구조의 다이오드 제작 및 특성 = A Fabrication and Characteristics of pn Diode Structures with Sputtered n+-Si Layer on p-Si(100) Substrate

다국어 초록 (Multilingual Abstract)

Heterojunction pn diode structures with amorphous phase high doped n-type silicon layer fabricated on p-Si(100) substrate by using sputtering method, in which the process temperature was relatively low, were fabricated and evaluated. The deposition rate of the sputtered silicon film was about 1∼2.7 nm/min. at the RF power range of 25∼100 W. The deposited n+-Si layer at room temperature on quartz substrate was found to be the amorphous phase. The contact resistance of the Ag/Ti electrode and deposited n+-Si layer was about 8×10-4Ω·cm2. Hydrogen terminated silicon surface conformed the improved interface properties of the pn diode fabricated using the sputtering method with semiconductor grade silicon target.