Study of Hydrogenated Silicon Thin Film Deposited by Using Dual-frequency Inductively-coupled Plasma-enhanced Chemical-vapor Deposition

다국어 초록 (Multilingual Abstract)

Microcrystalline silicon thin films were deposited using an inductively-coupled plasma sourcewith an internal linear-type antenna in the dual frequency mode (2 MHz/13.56 MHz), and thecharacteristics of the thin film and the plasma were investigated as functions of the relative powerratio. The deposition was performed in the SiH4 depletion condition at a deposition rate of about10 °A/s to improve the microstructural properties of the film. In the dual-frequency mode, thecrystalline volume fraction could be increased by increasing the low-frequency power, which isadded to the fixed 13.56 MHz rf power without changing the microstructure factor (R), which isrelated to defects in the crystal structure. The differences appear to be related to the lower-energyion bombardment of the substrate in the dual-frequency mode. In addition, by increasing the lowfrequencypower from 0 to 1.5 kW while keeping 3 kW at 13.56 MHz, we were able to change theuniformity of the deposition from 15.5% to less than 10% an improvement.

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