Correlations of a High-temperature AlN Buffer Layer and Al-Preseeding with the Structural and the Optical Properties of GaN on a Si(111) Substrate

다국어 초록 (Multilingual Abstract)

GaN epilayers were grown on Si(111) substrates with high-temperature (HT) AlN buffer layers by using metal-organic chemical vapor deposition (MOCVD). The correlations of the HT AlN buffer layer and Al-preseeding process with the structural and the optical properties of the GaN epilayer were investigated using optical microscopy (OM), X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM) and photoluminescence (PL) measurements. The results demonstrate that the structural and the optical properties of GaN on a Si(111) substrate strongly depended on such growth conditions as the AlN buffer layer thickness, the TMAl source flow rate and the Al-preseeding time. A nearly 2.5 μm, crack-free GaN epilayer was obtained with a 120-nm-thick AlN buffer layer grown at a TMAl source flow rate of 18 μmol/min and an Alpreseeding time of 5 sec. The near-band-edge emission peak with a full width at half maximum value of 44.93 meV at room temperature and a (002) X-ray rocking curve with a 385 arcsec linewidth attest to the high quality of GaN on the Si(111) substrate.

참고문헌 (Reference)

1 A. Dadgar, 248 : 556-, 2003

2 J. H. Yang, 517 : 5057-, 2009

3 K. Cheng, 298 : 822-, 2007

4 S. Pal, 27 : 501-, 2004

5 H. M. Liawa, 44 : 685-, 2000

6 H. Ishikawa, 189 : 178-, 1998

7 Y. Lu, 236 : 77-, 2002

8 K. J. Lee, 85 : 1502-, 2004

9 F. Schulze, 88 : 121114-, 2006

10 P. Waltereit, 74 : 3660-, 1999

11 A. Krost, 93 : 77-, 2002

12 B. Heying, 68 : 643-, 1996

13 Y. L. Tsai, 263 : 176-, 2004

14 B. S. Zhang, 270 : 316-, 2004

15 P. Chen, 225 : 150-, 2001

16 H. Lahr eche, 217 : 13-, 2000

17 M.K.Kwon, "Effect of an Al Pre-seeded AlN Buffer on GaN Films Grown onSi(111) Substrates by Using SiC Intermediate Layers" 한국물리학회 41 (41): 880-883, 2002