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https://www.riss.kr/link?id=O50750885
2008년
eng
1938-5862
1938-6737
학술저널
ECS TRANSACTIONS ; V 16 NO 5 2008
203-212 [※수록면이 p5 이하이면, Review, Columns, Editor's Note, Abstract 등일 경우가 있습니다.]
9781566776516; 1566776511
International symposium on high dielectric constant materials; Physics and technology of high-k gate dielectrics. Dielectric and semiconductor materials, devices, and processing
5th
Honolulu, HI
2008; Oct
0
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Work Function and Effective Oxide Thickness Engineering via Alloying of Metal Gate Electrodes
Single Metal/Dual High-k CMISFETs without High-k-induced Vth Variation by MgO or Al2O3 Incorporation
Engineering High Dielectric Constant Materials for Band-Edge CMOS Applications
Fundamental Aspects of Effective Work Function Instability of Metal/Hf-based High-k Gate Stacks