405nm GaN-LED 고 휘도화에 의한 백색 발광 다이오드의 특성 향상 = Improvement of White LED Performance using the High Output power

다국어 초록 (Multilingual Abstract)

We demonstrate a light conversion white light-emitting diode (LED) for general illumination applications. The white LED was fabricated by combining a 405 nm LED with three phosphors,yellow-red, blue, and green. In order to achieve a high light-output power from the LED, we fabricated
the 405 nm LED with a 1 1 mm2 device size. The light-output power of 405 nm LED was dramatically improved not only by introducing an indium tin oxide (ITO) transparent metal electrode
(TME) but also by growing the LED with a lateral epitaxial structure on a patterned sapphire substrate (LEPS). The ITO TME and the LEPS will improved the light-extraction eciency due to the better optical transmittance the lateral current spreading due to the lower lateral resistance,
and the internal quantum eciency (IQE) due to a better crystal quality. The light-output power of the 405 nm LED was as large as 112 mW at a 350 mA junction current. A maximum external quantum eciency (EQE) as large as 13.4 % was obtained under a 200 mA junction current. The white LED consisting of a 405 nm LED and three phosphors yellow-red, blue, and green proved to have be excellent device performance with CCT = 5,596 K, luminous
ux = 15.6 lm (11.4 lm/W),
color index CIE x = 0.3304 and y = 0.3254, and CRI = 84.4.

참고문헌 (Reference)

1 S. Nakamura, "The Blue Laser Diode" Springer 1997