We report on an investigation of the applicability of the skew scattering model for the anomalous Hall Effect in (Ga,Mn)As prepared using low-temperature molecular beam epitaxy. Specifically, we study the relationship between the Hall resistivity (xy)...
We report on an investigation of the applicability of the skew scattering model for the anomalous Hall Effect in (Ga,Mn)As prepared using low-temperature molecular beam epitaxy. Specifically, we study the relationship between the Hall resistivity (xy) and the longitudinal resistivity (xx) fordiffering Mn concentrations incorporated into the IIIGa site. The growth conditions for single-phase (Ga,Mn)As were carefully determined by using in-situ reflection high-energy electron diffraction, exsitu high-resolution X-ray diffraction, superconducting quantum interference device magnetometry,and magneto-transport measurements. After the growth of (Ga,Mn)As with values of TC ranging from 60 to 100 K, the samples were annealed in an inert atmosphere, with the resulting values of TC ranging from 80 to 130 K as measured indirectly from transport measurements and from Hall measurements. From the Hall measurements, we found that the anomalous Hall coefficient to scaled linearly with the resistivity for various ranges of Mn contents in which we could rule out the co-existence of secondary precipitates.