This paper describes the physical, electrical and optical characteristics of Aluminum(AI) thin films deposited on corning glass substrate by DC magnetron sputtering. The AL thin films were investigated as variations of the input power, pressure and de...
This paper describes the physical, electrical and optical characteristics of Aluminum(AI) thin films deposited on corning glass substrate by DC magnetron sputtering. The AL thin films were investigated as variations of the input power, pressure and deposition time. The deposition rate was increased linearly as the input power increased. When Ar gas pressure was increased, the deposition rate was reduced. The maximum of deposition rate efficiency was obtained at 3 mtorr. The columnar growth and stable grain growth of AL thin films were observed through SEM on condition that the input power was increased and Ar gas pressure was decreased.
The crystal qualities of AL thin films were also observed by XRD. In the XRD patterns, (111) oriented direction was only appeared at 38.5℃ The intensity of XRD peak was increased with increasing input power but decreased with increasing Ar gas pressure. The resistivity and Sheet resistivity were 4.85μΩ.cm and 0.052Ω/□, respectively, under input power(9W/㎠), pressure(7mtorr) and deposition time(10min).
Depending on the input power, reflectance ranged from 84% to 94%. However, Ar gas pressure don't have influence on the reflectance. The maximum reflectance of the Al thin films was obtained at input power, 3W/㎠ and pressure, 3mtorr.