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Anti-LGI1 Limbic Encephalitis Presented with Atypical Manifestations
이정주,주건,정근화,이순태,이상건 한국뇌신경과학회 2013 Experimental Neurobiology Vol.22 No.4
Anti-leucine-rich glioma inactivated-1 (LGI1) limbic encephalitis (LE) is a rare neurological disorder that has a subacute course ofprogressive encephalopathy and fasciobrachial dystonic seizures. We report a patient with anti-LGI1 LE that presented with atypicalmanifestations that complicated the diagnosis. A 62-year-old woman presented with a chronic course of memory disturbanceand a subsequent relapse with an altered mental status after 10 months. The patient reported frequent chest pain of squeezing anddull nature, typically lasting 10–30 seconds. The chest pain was related to partial seizures, which were confirmed by video-EEGmonitoring. Anti-LGI1 antibody was identified in serum and CSF. The patient’s symptoms improved by immune modulationtreatment. Patients with anti-LGI1 LE can experience atypical partial seizures, and a chronic relapsing course. Clinical suspicions andvideo-EEG monitoring are helpful for the early diagnosis and effective immune modulation.
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전기로 제강분진을 재활용한 포장도로 발생 먼지의 입경별 중금속 분포에 관한 연구
이정주 龍仁大學校 1998 용인대학교 논문집 Vol.15 No.-
Electric arc furnace(EAF) dust containing many heavey metals is classified as toxic, and EAF dust as a solid waste is prohibited from land fill. EAF dust is produced from 1% of steel production as a by-product of the steel manufacturing industry in Korea. Application of EAF dust for mineral filler of asphalt concrete mixture is examined in this study. Surveys include the basic property test of EAF dust and general filler dust(limestone powder) comparison test of distribution of heavy metals in fugitive dust. It has been found that industrial waste substituted for aspalt concrete filler snow no more toxic than the general filler dust by testing methods of physical and chemical component for air pollution risk assessment.
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電氣集塵機 效率向上을 위한 放電極 印加電壓 特性에 關한 硏究
李廷株,金鍾浩,都硏知 龍仁大學校 1996 용인대학교 논문집 Vol.12 No.-
The purpose of this study was to determine the optimum collection efficiency for various applied voltage of Electrostatic Precipitator. The experiment was performed between 15kV and 30kV. Collection efficiency was measured by Anderson Sampler(cascade impactor). The results of this experiment were as follows ; (1) In order to determine the ESP's optimum operating condition, we measured an electric property of discharging electrode. (2) Optimum applied voltage and overall collection efficiency were 25kV and 98.4%, respectively. (3) When applied voltage value was higher than 25kV, the collection efficiency shows a tendency to decline. We estimated that this result was due to ionic winds generated by electric field.
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진공증착법에 의해 제작된 β-In₂S₃ 박막의 물리적 특성
이정주,이종덕,안병렬,김건호 한국물리학회 2008 새물리 Vol.57 No.2
$\beta$-In$_2$S$_3$ films were prepared on indium-tin-oxide (ITO)-coated glass substrates by using thermal evaporation. The crystallization was achieved by annealing the as-deposited films in a vacuum electric furnace. X-ray diffraction spectra showed that the crystal structure of the $\beta$-In$_2$S$_3$ films was that of a tetragonal defect spinel structure with lattice constants a = 7.62 $\AA$ and c = 32.33 $\AA$ and that the crystals were preferentially grown with a (1 0 9) orientation. The optical energy band gap, measured at room temperature, of the as-deposited $\beta$-In$_2$S$_3$ film was 1.84 eV and decreased to about 1.7 eV upon annealing in a vacuum electric furnace at temperatures from 200 $^\circ$C to 400 $^\circ$C. The dynamical behavior of the charge carriers in the $\beta$-In$_2$S$_3$ film was investigated by using photoinduced discharge characteristics (PIDC) techniques. 진공증착법으로 $\beta$-In$_2$S$_3$ 박막을 ITO (indium-tin-oxide) 유리 기판 위에 제작하였다. 결정화는 증착된 박막들을 진공 상태에서 200, 300, 400 $^\circ$C로 열처리함으로서 이룰 수 있었다. X-선 회절 분석에 의하여 증착된 $\beta$-In$_2$S$_3$ 박막의 살창 상수는 a=7.62 $\AA$와 c=32.33 $\AA$로서 정방정계 (tetragonal) 결함 스피넬 (defect spinel) 구조이었고, 열처리 온도를 증가시킴에 따라 (1 0 9) 방향으로 선택 성장됨을 알 수 있었다. 증착된 $\beta$-In$_2$S$_3$ 박막에 대하여 실온에서 측정한 광학적인 에너지 띠 간격은 1.84 eV이었고, 열처리 온도가 증가함에 따라 띠 간격도 감소하였으며 400 $^\circ$C에서 열처리된 박막의 광학적 에너지 띠 간격은 약 1.7 eV이었다. $\beta$-In$_2$S$_3$ 박막 내의 전하 운반자들의 동역학적 거동을 광유기 방전 특성 (PIDC: photoinduced discharge characteristics) 방법으로 조사하였다.
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Structural and Optical Properties of AgInSe2 Films Prepared on Indium Tin Oxide Substrates
이정주,김건호,Byeong Yeol Ahn,김현수,이종덕 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.4
AgInSe2 films were prepared on the indium-tin-oxide (ITO)- coated glass substrates by using thermal evaporation. X-ray diffraction spectra showed that the AgInSe2 films were preferentially grown along the (112) orientation. The crystal structure was chalcopyrite with lattice constants a = 6.102 °A and c = 11.69 °A. X-ray photoelectron spectroscopy spectra showed that the asdeposited AgInSe2 film was Ag-rich while the AgInSe2 film annealed at 300 C was In-rich. From the atomic force microscope images, the root-mean-square roughness and the grain size decreased with increasing annealing temperature. The optical energy band gap, measured at room temperature, of the as-deposited AgInSe2 film was 1.76 eV, and it increased to about 1.82 eV upon annealing at 100 300 C in vacuum. The dynamical behavior of the charged carriers in the AgInSe2 film was investigated by using the photoinduced discharge characteristics technique.
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이정주,D. H. Han,이종덕,박창영,김건호 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.56 No.4
Cd2GeSe4 and Cd2GeSe4:Co2+ films were prepared on indium-tin-oxide (ITO)- coated glass substrates. X-ray diffraction spectra showed that the Cd2GeSe4 and the Cd2GeSe4:Co2+ films were preferentially grown with the (113) orientation. The crystal structure was rhombohedral (hexagonal)with lattice constants a = 7.405 °A and c = 36.24 °A for Cd2GeSe4 films and a = 7.43 °A and c = 36.81 °A for Cd2GeSe4:Co2+ films. From X-ray photoelectron spectroscopy, the binding energies of the Cd-3d, the Ge-3d, and the Se-3d core levels due to the formations of Cd2GeSe4and Cd2GeSe4:Co2+ were found to be 404.5 eV and 411.3 eV, 30.4 eV and 31.3 eV, and 54.7 eV and 58.9 eV, respectively. The optical energy band gaps, measured at room temperature, of the as-deposited Cd2GeSe4 and Cd2GeSe4:Co2+ films were 1.97 eV and 1.72 eV and those of the 400C-annealed films were 1.85 eV and 1.7 eV, respectively. The dynamical behaviors of the charge carriers in the Cd2GeSe4 and Cd2GeSe4:Co2+ films were investigated by using the photoinduced discharge characteristics (PIDC) technique.
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