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김우재,고재권,고종철,남정권,하기용,신문식,김영두,김보경,강현중,김기영,백만기,박현수,백소현,신운철,김경훈,정진일,황흥구,김정곤 한국육종학회 2010 한국육종학회지 Vol.42 No.6
‘다청’은 국립식량과학원 벼맥류부에서 2008년도에 육성한 중만생 고품질 복합내병충성 품종으로 주요특성과 수량성을 요약하면 다음과 같다. 1. 남서해안지, 호남 및 영남평야지 보통기 보비재배에서 평균 출수기가 8월 19일로 ‘남평벼’보다 2일 늦은 중만생종이다. 2. 간장은 87 cm로 ‘남평벼’보다 크며, 수당립수는 많고 등숙비율이 다소 낮은 중립종에 속한다. 3. 위조현상은 나타나지 않았으며 성숙기 하엽노화가 늦고 수발아는 ‘남평벼’보다 잘 되는 편 ‘Dacheong’, a new japonica rice variety developed from a cross between Iksan450 having a good eating-quality and multi-disease resistance, and YR21258-GH3 having insect resistance, was developed by the rice breeding team of Department of Rice and Winter Cereal Crop, NICS, RDA in 2008. This variety has about 125 days growth duration from transplanting to harvesting in west-southern coast, Honam and Youngnam plain of Korea. It has 87 cm culm length and tolerance to lodging. In reaction to biotic and abiotic stresses, it shows resistance to blast, bacterial blight pathogen races from K1 to K3, stripe virus and brown plant hopper. The milled rice of ‘Dacheong’ exhibits translucent, relatively clear non-glutinous endosperm and medium short grain. It has slightly lower amylose content of 18.8% and lower protein content of 5.7%, and good palatability of cooked rice compared with Nampyeongbyeo. The milled rice yield performance of this variety is about 5.91 MT/ha in local adaptability test for three years. ‘Dacheong’ would be adaptable to west-southern coast, Honam and Youngnam plain of Korea.
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Fast Evaluation of Period Deviation and Flatness of a Linear Scale by Using a Fizeau Interferometer
김우재,Yuki Shimizu,Akihide Kimura,Wei Gao 한국정밀공학회 2012 International Journal of Precision Engineering and Vol. No.
A reflective-type linear scale with a pitch of 1.67 m used in an interferential scanning-type 2-DOF linear encoder is evaluated by the Fizeau interferometer with a measurement range of 100 mm. The 2-DOF linear encoder produces 2-axis position signals based on the interference between the X-directional positive and negative first-order diffracted beams from the linear scale. Firstly, the Z-directional flatness eZ(x,y) of the linear scale is evaluated from the wavefront of the zero-order diffracted beam reflected from the linear scale. The linear scale is then tilted to align the axes of the first-order diffracted beams with that of the interferometer so that the X-directional period deviation eX(x,y)of the linear scale can be evaluated from the wavefronts of the X-directional positive and negative first--order diffracted beams. Finally, the Z-directional flatness eZ(x,y) and X-directional period deviation eX(x,y) were verified by comparing those with the nonlinear components of the 2-DOF linear encoder using the evaluated linear scale.
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김우재,신기원,권희태,온범수,박연수,김지환,방인영,권기청,Kim, Woo Jae,Shin, Gi Won,Kwon, Hee Tae,On, Bum Soo,Park, Yeon Su,Kim, Ji Hwan,Bang, In Young,Kwon, Gi-Chung 한국반도체디스플레이기술학회 2021 반도체디스플레이기술학회지 Vol.20 No.1
The number of processes in the manufacture of semiconductors, displays and solar cells is increasing. And as the processes is performed, multiple layers of films and various patterns are formed on the wafer. At this time, substrate warpage occurs due to the difference in stress between each film and pattern formed on the wafer. the substrate warping phenomenon occurs due to the difference in stress between each film and pattern formed on the wafer. We developed a new warpage measurement method to measure wafer warpage during real-time processing. We performed an experiment to measure the presence and degree of warpage of the substrate in real time during the process by adding only measurement equipment for applying additional electrical signals to the existing ESC and detecting the change of the additional electric signal. The additional electrical measurement signal applied at this time is very small compared to the direct current (DC) power applied to the electrostatic chuck whit a frequency that is not generally used in the process can be selectively used. It was confirmed that the measurement of substrate warpage can be easily separated from other power sources without affecting.
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p-n 접합 형성을 위한 반도체 실리콘 웨이퍼 대기압 플라즈마 붕소 확산 가능성 연구
김우재,이환희,권희태,신기원,양창실,권기청 한국반도체디스플레이기술학회 2017 반도체디스플레이기술학회지 Vol.16 No.4
Currently, techniques mainly used in semiconductor impurity diffusion processes include furnace thermal diffusion, ion implantation, and vacuum plasma doping. However, there is a disadvantage that the process equipment and the unit cost are expensive. In this study, boron diffusion process using relatively inexpensive atmospheric plasma was conducted to solve this problem. With controlling parameters of Boron diffusion process, the doping characteristics were analyzed by using secondary ion mass spectrometry. As a result, the influence of each variable in the doping process was analyzed and the feasibility of atmospheric plasma doping was confirmed.
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