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Oh, Yunjung,Yang, Wooseok,Kim, Jimin,Jeong, Sunho,Moon, Jooho American Chemical Society 2017 ACS APPLIED MATERIALS & INTERFACES Vol.9 No.16
<P>Efficient sunlight-driven water-splitting devices can be achieved by using an optically and energetically well-matched pair of photoelectrodes in a tandem configuration. The key for maximizing the photoelectrochemical efficiency is the use of a highly transparent front photoelectrode with a band gap below 2.0 eV. Herein, we propose two-dimensional (2D) photonic crystal (PC) structures consisting of a CuFeO2-decorated microsphere monolayer, which serve as self-light-harvesting architectures allowing for amplified light absorption and high transparency. The photocurrent densities are evaluated for three CuFeO2 2D PC-based photoelectrodes with microspheres of different sizes. The optical analysis confirmed the presence of a photonic stop band that generates slow light and at the same time amplifies the absorption of light. The 410 nm sized CuFeO2 decorated microsphere 21) PC photocathode shows an exceptionally high visible light transmittance of 76.4% and a relatively high photocurrent of 0.2 mA cm(-2) at 0.6 V vs a reversible hydrogen electrode. The effect of the microsphere size on the carrier collection efficiency was analyzed by in situ conductive atomic force microscopy observation under illumination. Our novel synthetic method to produce self-light-harvesting nanostructures provides a promising approach for the solar energy by highly transparent photocathodes. effective use of solar energy by highly transparent photocathodes.</P>
Optical and photoelectrochemical properties of transparent NiO quantum dots
Patel, Malkeshkumar,Kim, JoohnSheok,Kim, Byung Soo,Kim, Yong-Ha,Kim, Joondong Elsevier 2018 Materials letters Vol.218 No.-
<P><B>Abstract</B></P> <P>Intrinsic p-type NiO quantum dots were applied to study the thickness-dependent optical properties and photoelectrochemical performances. The reactive sputtering method was applied to grow quality NiO quantum dots (size of 5–7 nm) at a room-temperature for large-scale production. By controlling the NiO film thickness, the optical and photoelectrochemical features can be modulated, which are for the blue shift of band gap value (from 3.6 eV to 3.9 eV, Burstein-Moss shift), enhanced optical absorption, electrical conductivity, and a shift of flat band potential. A thin NiO film (50 nm) exhibited the same amount of photocurrent that of the 200 nm-thick NiO film. This strongly suggests the intensive light absorption property of the NiO film to illuminate of possibility of thin film uses. The transparent optical property and degenerate nature of NiO quantum dots will be a great interest to integrate them with low bandgap materials for the advantage of high light absorption and heterojunction for the water-splitting and hydrogen production.</P> <P><B>Highlights</B></P> <P> <UL> <LI> NiO quantum dot photocathode embedded transparent photoelectrochemical cells. </LI> <LI> Reactive sputtering formed NiO has a high transmittance profile (>80%). </LI> <LI> Enhanced optical absorption and carrier concentration by thickness control. </LI> <LI> Blue shift was appeared in bandgap from 3.6 eV to 3.9 eV in NiO film. </LI> </UL> </P>