중등학교 프랑스어과 성취기준 설정에 따른 교육과정 내용의 재구조화 연구

이근님(Lee, Kun-Nim) 한국외국어교육학회 2014 Foreign languages education Vol.21 No.3

After the content items of the secondary French curriculum changed to an achievement standards format, the new format appeared to be inconsistent with French education’s current content structure—language skills, language materials, and culture. This study aims to enhance the validity of the creation of the achievement standards by reshaping the curriculum to be more in line with the newly developed standards. This study provides a historical analysis of French curriculum structure and a review of existing literature on the second language education. And it also analyzes the foreign language curriculum structures in several foreign countries. Based on the discussion of preceding chapters, a restructuralization of French curriculum is suggested. The essence of the restructuralization is to divide the achievement standards into language achievement and cultural achievement, as well as to present language skills and materials—subcategories of language achievement in achievement standards formats. Also needed are standards for comprehensive skills including listening, speaking, reading, and writing. To be consistent with the purpose of the achievement standards format, the objectives, teaching and learning methods, and evaluation in French curriculum need to be modified. Finally, I suggest to the entities who are involved in the 2015 curriculum revision the need for scrutiny of the current curriculum format, as well as a change to the format in future development. Après le changement des éléments de contenu faisant partie du curriculum de l’enseignement du français au niveau secondaire pour un nouveau format basé sur les critères d’accomplissement, la structure actuelle de l’enseignement, composée de compétences langagières, de matières langagières et de contenus culturels, n’est plus conforme avec celle modifiée. Par conséquent, cette thèse vise à restucturer le cadre des contenus du curriculum, compte tenu des critères d’accomplissement développés, afin de réhausser la pertinence de l’établissement de ces critères. Cette étude explique l’analyse de la structure des contenus de tous les anciens curriculums et les résultats issus des études et de l’analyse précédentes portant sur les contenus de l’enseignement des langues vivantes. Elle présente ensuite les résultats de l’analyse des contenus des programmes en vigueur à l’étranger, ce qui nous conduit au dernier chapitre qui propose un programme restructuré. Pour résumer ce dernier, les points essentiels consistent à décliner les critères d’accompplissement en deux – critères langagiers et culturels ; proposer les compétences et les matières langagières, sous-catégorie des critères langagiers, sous forme du nouveau format des critères d’accomplissement ; présenter les critères d’accomplissement pour les compétences intégrales comprenant la compréhension et la production orales et écrites ; enfin, faire adapter d’autres points sous ce nouveau format des critères, tels que les objectifs d’enseignement, les méthodes didactiques et celles d’apprentissage, les critères d’évaluation dans le cadre du curriculum de l’enseignement du français. Avec cette proposition, cette thèse invite les chercheurs étudiant le nouveau curriculum 2015 à examiner avec prudence la stucture des contenus actuelle et à réfléchir à la nécessité de la restructuration des contenus à réaliser dans l’avenir.

Contact Effect of ReS₂/Metal Interface

Park, Jae Young,Joe, Hang-Eun,Yoon, Hyong Seo,Yoo, SangHyuk,Kim, Taekyeong,Kang, Keonwook,Min, Byung-Kwon,Jun, Seong Chan American Chemical Society 2017 ACS APPLIED MATERIALS & INTERFACES Vol.9 No.31

<P>Rhenium disulfide (ReS2) has attracted immense interest as a promising two-dimensional material for optoelectronic devices owing to its outstanding photonic response based on its energy band gap's insensitivity to the layer thickness. Here, we theoretically calculated the electrical band structure of mono-, bi-, and trilayer ReS2 and experimentally found the work function to be 4.8 eV, which was shown to be independent of the layer thickness. We also evaluated the contact resistance of a ReS2 field-effect transistor using a Y-function method with various metal electrodes, including graphene. The ReS2 channel is a strong-n-type semiconductor, thus a lower work function than that of metals tends to lead to a lower contact resistance. Moreover, the graphene electrodes, which were not chemically or physically bonded to ReS2, showed the lowest contact resistance, regardless of the work function, suggesting a significant Fermi-level pinning effect at the ReS2/metal interface. In addition, an asymmetric Schottky graphene for ohmic contacts and Pt or Pd for Schottky contacts. The ReS2-based transistor used in this study on the work function of ReS2 achieved the possibility of designing the next-generation nanologic devices.</P>

Comparison of Electrical and Photoelectrical Properties of ReS₂ Field-Effect Transistors on Different Dielectric Substrates

Nazir, Ghazanfar,Rehman, Malik Abdul,Khan, Muhammad Farooq,Dastgeer, Ghulam,Aftab, Sikandar,Afzal, Amir Muhammad,Seo, Yongho,Eom, Jonghwa American Chemical Society 2018 ACS APPLIED MATERIALS & INTERFACES Vol.10 No.38

<P>As one of the newly discovered transition-metal dichalcogenides (TMDs), rhenium disulfide (ReS<SUB>2</SUB>) has been investigated mostly because of its unique characteristics such as the direct band gap nature even in bulk form, which is not prominent in other TMDs (e.g., MoS<SUB>2</SUB>, WSe<SUB>2</SUB>, etc.). However, this material possesses a low mobility and an on/off ratio, which restrict its usage in high-speed and fast switching applications. Low mobilities or on/off ratios can also be caused by substrate scattering as well as environmental effects. In this study, we used few-layer ReS<SUB>2</SUB> (FL-ReS<SUB>2</SUB>) as a channel material to investigate the substrate-dependent mobility, current on/off ratio, Schottky barrier height (SBH), and trap density of states of different dielectric substrates. The hexagonal boron nitride (h-BN)/FL-ReS<SUB>2</SUB>/h-BN structure was observed to exhibit a high mobility of 45 cm<SUP>2</SUP> V<SUP>-1</SUP> s<SUP>-1</SUP>, current on/off ratio of about 10<SUP>7</SUP>, the lowest SBH of about 12 mV at a zero back-gate voltage (<I>V</I><SUB>bg</SUB>), and a low trap density of states of about 5 × 10<SUP>13</SUP> cm<SUP>-3</SUP>. These quantities are reasonably superior compared to the FL-ReS<SUB>2</SUB> devices on SiO<SUB>2</SUB> substrates. We also observed a nearly 5-fold improvement in the photoresponsivity and external quantum efficiency values for the FL-ReS<SUB>2</SUB> devices on h-BN substrates. We believe that the photonic characteristics of TMDs can be improved by using h-BN as the substrate and capping layer.</P> [FIG OMISSION]</BR>

Persistent and reliable electrical properties of ReS2 FETs using PMMA encapsulation

Ryu Eui-Hyoun,Seo Miri,Je Yugyeong,Jeong HyunJeong,Kim Gyu-Tae,Lee Sang Wook 한국물리학회 2023 Current Applied Physics Vol.48 No.-

We investigated electrical properties f ReS2 field effect transistor (FET) by focusing on how the absorbent molecules on the surface of ReS2 channel could affect to its FET performances. A few layer ReS2 based FET devices were fabricated by nanofabrication processes including micro-contact transfer method and electron-beam lithography technique. The FET characteristics were measured under following conditions: 1) with pristine device, 2) at vacuum condition, 3) after baking FET with hot plate, and 4) after PMMA spin-coating on FET. The current value at output characteristics were increased and hysteresis at transfer curve reduced when FET was measured in vacuum state and after baking process. The improved FET performances such as higher current and mobility values after baking process could be maintained by encapsulating the ReS2 channel using PMMA spin-coating process. The effects of absorbents such as water and oxygen molecules on the ReS2 surface were suggested based on the experimental results. Our results showed that simple baking and spin-coating methods could improve the electrical characteristics and maintain a persistent performance of ReS2 FET.

Large-Area CVD-Grown Sub-2 V ReS₂ Transistors and Logic Gates

Dathbun, Ajjiporn,Kim, Youngchan,Kim, Seongchan,Yoo, Youngjae,Kang, Moon Sung,Lee, Changgu,Cho, Jeong Ho American Chemical Society 2017 NANO LETTERS Vol.17 No.5

<P>We demonstrated the fabrication of large-area ReS2 transistors and logic gates composed of a chemical vapor deposition (CVD)-grown multilayer ReS2 semiconductor, channel and graphene electrodes. Single-layer graphene was used as the source/drain and coplanar gate electrodes. Anion gel with an, ultrahigh capacitance effectively,gated the ReS2 channel at a low voltage, below 2 V, through a coplanar gate: The.contact resistance of the ion gel-gated ReS2 transistors with graphene electrodes decreased dramatically compared with the SiO2-devices prepared with Cr electrodes, The resulting transisiors exhibited good device performance, including a maximum electron mobility of 0:9 cm(2)/(V s) and an on/off current ratio exceeding 10(4). NMOS logic devices, such as NOT, NAND, and NOR, gates, were assembled using the resulting transistors as a proof of concept demonstration of the applicability of the devices. to complex logic circuits. The large-area synthesis of ReS2 semiconductors and graphene electrodes and their applications in logic devices open up new opportunities for realizing future flexible electronics based on 2D nanornaterials.</P>

재생에너지 확충계획을 고려한 주파수제어예비력 요구량 산정 방법

조혜원,송유훈,국경수 대한전기학회 2024 전기학회논문지 Vol.73 No.4

As the penetration of RES is increasing rapidly to reduce the green house gas emission, there are concerns that the variability of RES, which is highly weather-dependent, would amplify the variability of the power system in terms of balancing electricity supply and demand. A frequency regulating reserve has been operated to respond to such variability in the power system and its requirements is calculated by analysing the history data of the electiricity demand. However, existing methods do not consider variability of RES, which should be estimated considering the expansion plan of RES for the future power system. In this paper, a method is proposed to calculate the frequency regulating reserve requirements of the power system with a high penetration level of RES. For doing this, the variabilities of electricity demand and RES respectively derived from those history data are projected to the future power system, and the required amount of the frequency regulating reserve is statistically calculated to respond those variabilities. The effectiveness of the proposed method is verified through study cases employing Korean power system developed for the basic plan of long-term electricity supply and demand.

Growth of Wafer-Scale ReS₂ with “Tunable” Geometry toward Electron Field-Emission Application

Kumar, Mohit,Park, Dae Young,Singh, Ranveer,Jeong, Mun Seok,Som, Tapobrata,Kim, Joondong American Chemical Society 2019 ACS APPLIED MATERIALS & INTERFACES Vol.11 No.39

<P>Despite high potential, the promise of 2D materials has not been realized practically because of limits of tiny grown size and difficult manipulation of the active spot. The utilization of 2D layers is the ultimate approach, which should be supported by large-scale production. In this very first report, we demonstrate the wafer-scale production of ReS<SUB>2</SUB> using the conventional sputtering method. The controllability of ReS<SUB>2</SUB> geometry has been investigated to form typical thin films or vertically aligned layers that are further applied for field emission. The vertically aligned ReS<SUB>2</SUB> layers exhibit ultralow turn-on electric field (0.6 V μm<SUP>-1</SUP>) with the current density (0.6 mA cm<SUP>-2</SUP>) and significantly low threshold electric field (0.8 V μm<SUP>-1</SUP>), respectively, along with outstanding emission stability. The results are attributed to weakly coupled ReS<SUB>2</SUB> layers and the high geometrical field enhancement factor (∼1.08 × 10<SUP>5</SUP>). Further, Kelvin probe force microscopy measurements confirm that lowering the work function is not solely responsible to achieve the ultralow operative field. Moreover, finite element simulation suggests that not only the length, width, and separation of the nanostructures but also the local slope plays an important role in suppressing screening effects.</P> [FIG OMISSION]</BR>

해표방제간(解表方劑間)의 연관성(聯關性) 확립(確立)에 대(對)한 문헌적(文獻的) 연구(硏究)

유재현,윤지석,제갈경환,노종성,변성희,김상찬,Yoo, Jea Hyun,Yoon, Ji Seok,Jegal, Kyung Hwan,Roh, Jong Seong,Byun, Sung Hui,Kim, Sang Chan 대한한의학방제학회 2021 大韓韓醫學方劑學會誌 Vol.29 No.2

Objectives : The process of disease treatment in traditional medicine is defined as differentiating patterns and determining treatment. As an important part of this process, the herbal formulas are specific combinations or configurations of medicinal herbs that serve as tools for treatment. As clinical experience increased, the number of herbal formulas also increased. For example, there are 61,739 herbal formulas in Pujifang, and 96,592 in Dictionary of traditional chinese medicine prescriptions. In chapter of Release the exterior syndrome (RES; 解表劑) of textbook, the 42 formulas were presented. For the understanding on the formula, most of books explained with description or figure about the formulas. But there is no study on the interrelationship of each herbal formulas. This study investigated the interrelationship of RES herbal formulas. Methods : The RES herbal formulas were analyzed with the ingredients, actions and clinical applications by literature study. Results : To improve cognition the interrelationship of RES herbal formulas, we analyzed the formulas and established the 19 interrelations of herbal formulas. Conclusions : Finally, this study established the interrelation of herbal formula as one figure. This result could contribute to improve cognition the interrelationship of RES.

국내 송전계통 연계기준 기반 신재생발전원의 주파수조정 성능 평가 및 정량화 방법

최우영(Woo Yeong Choi),조기룡(Gi Ryong Jo),이지훈(Ji Hoon Lee),국경수(Kyung Soo Kook) 대한전기학회 2020 전기학회논문지 Vol.69 No.12

As the connection of renewable energy sources (RES) increases according to its expansion plan, the system operator has to be more cautious to manage the frequency stability in the power system. For doing that, many power grid utilities have announced the Grid code for the connection of RES with specific control performance such as the frequency response. However, the power system operators have to struggle in effectively considering the frequency response of RES in managing the operating reserve for controlling the frequency since there is no method for qualitatively evaluating the frequency response from RES. Therefore, this paper proposes the method for evaluating and quantifying the frequency response from RES considering the grid connection code in the Korean power system.

Optical and electrical properties of monolayer ReS2 developed via chemical vapor deposition on SiO2/Si substrate

Go Ji Seong,Kim Minseo,Kim Seunghyun,Jeon Hyungjun,Hong Seohyun,Kim Jaemin,Oh Guen Hyung,Mane Sagar M.,Kim TaeWan 한국물리학회 2021 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.78 No.11

In recent years, two-dimensional transition metal dichalcogenides (TMDs) have been attracted promising candidates for imminent electrical and optical device applications owing to their remarkable properties and unique structures. In this study, we report the optical and electrical characteristics of the newest member of the TMD family, i.e. monolayer of rhenium disulfide ( ReS2) field effect transistor on a SiO2/ Si substrate developed using the chemical vapor deposition technique. The quality of the as-grown monolayer of ReS2 was evaluated through Raman spectroscopy, whereas the surface elemental composition was analyzed thorough X-ray photoelectron spectroscopy. The optical properties of this monolayer TMD were analyzed using photoluminescence spectroscopy, and the contact resistance between the as-grown semiconducting monolayer and the metal electrodes was examined using the transmission line modeling method. Ti/Au electrodes form an excellent ohmic contact with the monolayers of the ReS2 film. The electron mobility of the monolayer ReS2 FETs fabricated through transmission line patterning was investigated at room temperature (300 K) and found to be 2.91 ×10–2 cm2 V− 1 s− 1 whereas the on/off ratio of the device was 9.8 × 102.