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Lei Wang,C. David Wright,Mustafa. M. Aziz,Ci Hui Yang,Guo Wei Yang 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.6
The capping layer and the probe tip that serve as the protective layer and the recording tool, respectively, for phase-change probe memory play an important role on the writing performance of phase-change probe memory, thus receiving considerable attention. On the other hand, their influence on the readout performance of phasechange probe memory has rarely been reported before. A three-dimensional parametric study based on the Laplace equation was therefore conducted to investigate the effect of the capping layer and the probe tip on the resulting reading contrast for the two cases of reading a crystalline bit from an amorphous matrix and reading an amorphous bit from a crystalline matrix. The results indicated that a capping layer with a thickness of 2 nm and an electrical conductivity of 50 Ω−1m−1 is able to provide an appropriate reading contrast for both the cases, while satisfying the previous writing requirement, particularly with the assistance of a platinum silicide probe tip.
Thermal strain imaging of chalcogenide in a phase change memory
Keiji Takata,Hiroya Maekawa,Hiroki Endo 한국물리학회 2011 Current Applied Physics Vol.11 No.3
Thermal strain imaging using a scanning probe microscope enables us to observe thermal distribution with high resolution. A phase change memory (PCM) based on chalcogenide glasses switches their two stable states having low and relatively high resistances by Joule heating. Images obtained by thermal strain imaging revealed that Joule heating was mainly generated in particular regions and some boundaries. The large fluctuation of increases in temperature in the active area should greatly affect phase change in PCM.