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Baeg, Kang‐,Jun,Khim, Dongyoon,Jung, Soon‐,Won,Kang, Minji,You, In‐,Kyu,Kim, Dong‐,Yu,Facchetti, Antonio,Noh, Yong‐,Young WILEY‐VCH Verlag 2012 Advanced Materials Vol.24 No.40
<P>On page 5433, Yong‐Young Noh, Antonio Facchetti, Kang‐Jun Baeg, and co‐workers report that high performance ambipolar complementary inverters and ring oscillators are provided by a remarkable enhancement of both hole injection and transport for n‐channel dominant N2200 OFETs. The significant enhancement of hole mobility in N2200 OTFTs is attributed to the strong dipoles in fluorinated high‐k gate dielectric blend of P(VDF‐TrFE):PMMA. </P>
Khim, Dongyoon,Han, Hyun,Baeg, Kang‐,Jun,Kim, Juhwan,Kwak, Sun‐,Woo,Kim, Dong‐,Yu,Noh, Yong‐,Young WILEY‐VCH Verlag 2013 ADVANCED MATERIALS Vol.25 No.31
<P><B>Large‐area polymer FET arrays and integrated circuits (ICs)</B> are successfully demonstrated via a simple wire‐bar–coating process. Both a highly crystalline conjugated polymer layer and very smooth insulating polymer layer are formed by a consecutive wire‐bar–coating process on a 4‐inch plastic substrate with a short processing time for application as the active and dielectric layers of OFET arrays and ICs.</P>
Kim, Ran,Amegadze, Paul S. K.,Kang, Il,Yun, Hui‐,Jun,Noh, Yong‐,Young,Kwon, Soon‐,Ki,Kim, Yun‐,Hi WILEY‐VCH Verlag 2013 Advanced Functional Materials Vol.23 No.46
<P><B>Abstract</B></P><P>A high‐performance naphthalene diimide (NDI)‐based conjugated polymer for use as the active layer of n‐channel organic field‐effect transistors (OFETs) is reported. The solution‐processable n‐channel polymer is systematically designed and synthesized with an alternating structure of long alkyl substituted‐NDI and thienylene–vinylene–thienylene units (PNDI‐TVT). The material has a well‐controlled molecular structure with an extended π‐conjugated backbone, with no increase in the LUMO level, achieving a high mobility and highly ambient stable n‐type OFET. The top‐gate, bottom‐contact device shows remarkably high electron charge‐carrier mobility of up to 1.8 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP> (<I>I</I><SUB>on</SUB>/<I>I</I><SUB>off</SUB> = 10<SUP>6</SUP>) with the commonly used polymer dielectric, poly(methyl methacrylate) (PMMA). Moreover, PNDI‐TVT OFETs exhibit excellent air and operation stability. Such high device performance is attributed to improved π–π intermolecular interactions owing to the extended π‐conjugation, apart from the improved crystallinity and highly interdigitated lamellar structure caused by the extended π–π backbone and long alkyl groups.</P>
Baeg, Kang‐,Jun,Khim, Dongyoon,Jung, Soon‐,Won,Kang, Minji,You, In‐,Kyu,Kim, Dong‐,Yu,Facchetti, Antonio,Noh, Yong‐,Young WILEY‐VCH Verlag 2012 ADVANCED MATERIALS Vol.24 No.40
<P><B>A remarkable enhancement of p‐channel properties</B> is achieved in initially n‐channel dominant ambipolar P(NDI2OD‐T2) organic field‐effect transistors (OFETs) by the use of the fluorinated high‐k dielectric P(VDF‐TrFE). An almost two orders of magnitude increase in hole mobility (∼0.11 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>) originates from a strong interface modification at the semiconductor/dielectric interface, which provides high‐performance complementary‐like inverters and ring oscillator circuits.</P>
Jeong, Hyung‐,Gu,Lim, Bogyu,Na, Seok‐,In,Baeg, Kang‐,Jun,Kim, Juhwan,Yun, Jin‐,Mun,Kim, Dong‐,Yu WILEY‐VCH Verlag 2011 Macromolecular Chemistry and Physics Vol.212 No.21
<P><B>Abstract</B></P><P>A series of conjugated polymers (PDTP, PDTPT, PDTPTT) based on dithieno[3,2‐<I>b</I>:2′,3′‐<I>d</I>]pyrrole (DTP) containing branched side‐chains is synthesized. The synthesized polymers show good solubility due to branched side‐chains in the organic solvent in the absence of heat treatment. To increase the oxidation potential, unsubstituted thiophene units are introduced into the polymer backbone. The introduction of unsubstituted thiophene units increases the oxidation potential, elevates degradation temperature, and enhances electronic properties. The PDTPTT FETs show the highest charge‐carrier mobility among the three polymers. These polymers are used as a donor material in bulk heterojunction solar cells, and the PDTPTT photovoltaic cells exhibit high performance.</P>
Choi, Hyun Ho,Kang, Moon Sung,Kim, Min,Kim, Haena,Cho, Jeong Ho,Cho, Kilwon WILEY‐VCH Verlag 2013 Advanced functional materials Vol.23 No.6
<P><B>Abstract</B></P><P>A novel strategy for analyzing bias‐stress effects in organic field‐effect transistors (OFETs) based on a four‐parameter double stretched‐exponential formula is reported. The formula is obtained by modifying a traditional single stretched‐exponential expression comprising two parameters (a characteristic time and a stretched‐exponential factor) that describe the bias‐stress effects. The expression yields two characteristic times and two stretched‐exponential factors, thereby separating out the contributions due to charge trapping events in the semiconductor layer‐side of the interface and the gate‐dielectric layer‐side of the interface. The validity of this method was tested by designing two model systems in which the physical properties of the semiconductor layer and the gate‐dielectric layer were varied systematically. It was found that the gate‐dielectric layer, in general, plays a more critical role than the semiconductor layer in the bias‐stress effects, possibly due to the wider distribution of the activation energy for charge trapping. Furthermore, the presence of a self‐assembled monolayer further widens the distribution of the activation energy for charge trapping in gate‐dielectric layer‐side of the interface and causes the channel current to decay rapidly in the early stages. The novel analysis method presented here enhances our understanding of charge trapping and provides rational guidelines for developing efficient OFETs with high performance.</P>
Kim, Jong H.,Yun, Sun Woo,An, Byeong‐,Kwan,Han, Yoon Deok,Yoon, Seong‐,Jun,Joo, Jinsoo,Park, Soo Young WILEY‐VCH Verlag 2013 ADVANCED MATERIALS Vol.25 No.5
<P><B>An effective strategy for significantly increasing the organic transistor mobility with simultaneous reduction of the threshold voltage</B> utilizing discontinuous nano‐patches of charge‐transfer doping layer is demonstrated. By overlaying the nano‐patches on top of a given semiconducting film, mobility and threshold voltage of <I>p</I>‐type pentacene are remarkably improved to 4.52 cm<SUP>2</SUP> V<SUP>−1</SUP>s<SUP>−1</SUP> and −0.4 V, and those of <I>n</I>‐type Hex‐4‐TFPTA are also improved to 2.57 cm<SUP>2</SUP> V<SUP>−1</SUP>s<SUP>−1</SUP> and 4.1 V.</P>
Jang, Jaeyoung,Nam, Sooji,Chung, Dae Sung,Kim, Se Hyun,Yun, Won Min,Park, Chan Eon WILEY‐VCH Verlag 2010 Advanced Functional Materials Vol.20 No.16
<P><B>Abstract</B></P><P>A novel application of ethylene‐norbornene cyclic olefin copolymers (COC) as gate dielectric layers in organic field‐effect transistors (OFETs) that require thermal annealing as a strategy for improving the OFET performance and stability is reported. The thermally‐treated <I>N</I>,<I>N′</I>‐ditridecyl perylene diimide (PTCDI‐C13)‐based n‐type FETs using a COC/SiO<SUB>2</SUB> gate dielectric show remarkably enhanced atmospheric performance and stability. The COC gate dielectric layer displays a hydrophobic surface (water contact angle = 95° ± 1°) and high thermal stability (glass transition temperature = 181 °C) without producing crosslinking. After thermal annealing, the crystallinity improves and the grain size of PTCDI‐C13 domains grown on the COC/SiO<SUB>2</SUB> gate dielectric increases significantly. The resulting n‐type FETs exhibit high atmospheric field‐effect mobilities, up to 0.90 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP> in the 20 V saturation regime and long‐term stability with respect to H<SUB>2</SUB>O/O<SUB>2</SUB> degradation, hysteresis, or sweep‐stress over 110 days. By integrating the n‐type FETs with p‐type pentacene‐based FETs in a single device, high performance organic complementary inverters that exhibit high gain (exceeding 45 in ambient air) are realized.</P>
Kim, Se Hyun,Jang, Mi,Yang, Hoichang,Anthony, John E.,Park, Chan Eon WILEY‐VCH Verlag 2011 Advanced Functional Materials Vol.21 No.12
<P><B>Abstract</B></P><P>A chemically coupled polymer layer is introduced onto inorganic oxide dielectrics from a dilute chlorosilane‐terminated polystyrene (PS) solution. As a result of this surface modification, hydrophilic‐oxide dielectrics gain hydrophobic, physicochemically stable properties. On such PS‐coupled SiO<SUB>2</SUB> or AlO<SUB><I>x</I></SUB> dielectrics, various vacuum‐ and solution‐processable organic semiconductors can develop highly ordered crystalline structures that provide higher field‐effect mobilities (<I>μ</I><SUB>FET</SUB>s) than other surface‐modified systems, and negligible hysteresis in organic field‐effect transistors (OFETs). In particular, the use of PS‐coupled AlO<SUB><I>x</I></SUB> nanodielectrics enables a solution‐processable triethylsilylethynyl anthradithiophene OFET to operate with <I>μ</I><SUB>FET</SUB> ∼ 1.26 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP> at a gate voltage below –1 V. In addition, a complementary metal‐oxide semiconductor‐like organic inverter with a high voltage gain of approximately 32 was successfully fabricated on a PS‐coupled SiO<SUB>2</SUB> dielectric.</P>
Jang, Jaeyoung,Nam, Sooji,Im, Kyuhyun,Hur, Jaehyun,Cha, Seung Nam,Kim, Jineun,Son, Hyung Bin,Suh, Hwansoo,Loth, Marsha A.,Anthony, John E.,Park, Jong‐,Jin,Park, Chan Eon,Kim, Jong Min,Kim, Kinam WILEY‐VCH Verlag 2012 Advanced functional materials Vol.22 No.5
<P><B>Abstract</B></P><P>The preparation of uniform large‐area highly crystalline organic semiconductor thin films that show outstanding carrier mobilities remains a challenge in the field of organic electronics, including organic field‐effect transistors. Quantitative control over the drying speed during dip‐coating permits optimization of the organic semiconductor film formation, although the kinetics of crystallization at the air–solution–substrate contact line are still not well understood. Here, we report the facile one‐step growth of self‐aligning, highly crystalline soluble acene crystal arrays that exhibit excellent field‐effect mobilities (up to 1.5 cm V<SUP>−1</SUP> s<SUP>−1</SUP>) via an optimized dip‐coating process. We discover that optimized acene crystals grew at a particular substrate lifting‐rate in the presence of low boiling point solvents, such as dichloromethane (b.p. of 40.0 °C) or chloroform (b.p. of 60.4 °C). Variable‐temperature dip‐coating experiments using various solvents and lift rates are performed to elucidate the crystallization behavior. This bottom‐up study of soluble acene crystal growth during dip‐coating provides conditions under which one may obtain uniform organic semiconductor crystal arrays with high crystallinity and mobilities over large substrate areas, regardless of the substrate geometry (wafer substrates or cylinder‐shaped substrates).</P>