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Numerical analysis of nozzle shape effect on fluid motion in LPCVD batch-type furnace
지윤영,Dong Kee Sohn,Han Seo Ko 대한기계학회 2022 JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY Vol.36 No.10
The importance of equipment technology for semiconductor mass production is growing as well as the exponential increase in demand for semiconductors. A study was conducted to improve the flow condition of a low-pressure chemical vapor deposition (LPCVD) batch-type furnace. Convergent nozzle (C) and divergent nozzle (D) have been adopted to replace the current straight (ST) multi-nozzle system, which was analyzed hydrodynamically without considering the surface chemical reaction. From the result, the D nozzle was not suitable for application due to induced flow oscillation. The flow velocity on the edge of the wafer increased 3.03 % for the C nozzle. In addition, the mass flux was enhanced up to 3 times and the mass flow rate 11.49 % at 3 sections. Therefore, it was expected that the deposition performance of the LPCVD furnace would be improved by the enhanced convective flow when the C nozzle was applied to the multi-nozzle system.
Eunseon Yu,Youngmin Kim,Junsoo Lee,Yongbeom Cho,Won Jae Lee,Seongjae Cho 대한전자공학회 2018 Journal of semiconductor technology and science Vol.18 No.2
In this work, processing and characterization of ultra-thin poly-Si are performed for memory and logic applications. Ultra-thin poly-Si layers with different thicknesses were prepared on the deposited oxide by low-pressure chemical vapor deposition (LPCVD). Deposited poly-Si were doped through POCl3 gas-phase doping at 900 °C, in which 10-nm thickness was reduced. Afterward, postdeposition annealing (PDA) under different conditions were performed. Thicknesses of deposited poly-Si films were 20, 30, and 50 nm. The following PDA improves the crystallinity, which has been confirmed by high-resolution transmission electron microscopy (HR-TEM) with fast Fourier transform (FFT) imaging and sheet resistivity lowering. Also, superior crystalline film is observed in the thinner film and the bi-directionally arranged domains are obtained from the 40-nm poly-Si film.
Film properties of nitrogen-doped polycrystalline silicon for advanced gate material
Sang Ho Woo,Yil Wook Kim,Pyung Yong Um,Hae-Min Lee,김창구 한국화학공학회 2009 Korean Journal of Chemical Engineering Vol.26 No.3
Deposition of N-doped poly-Si films from SiH4 and NH3 using a single wafer type low pressure chemical vapor deposition (LPCVD) system was investigated to improve the grain size reduction and the grain size distribution. The deposition rate and surface roughness of N-doped Si were greatly affected by the NH3/SiH4 ratio such that they decreased with increasing NH3/SiH4 ratio. X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements revealed that with increasing NH3/SiH4 ratio, the size of the grains was decreased and the grains size distribution became uniform. Finally, we successfully obtained N-doped poly-Si films having uniform grain size of approximately 6 nm.
김도영,윤일구,김형준 한국물리학회 2010 Current Applied Physics Vol.10 No.3
The low pressure chemical vapor deposition (LP-CVD) of Al doped ZnO thin film was investigated for transparent electrode of thin film solar cell. For LP-CVD, diethylzinc and trimethylaluminum were used as Zn and Al precursors, respectively, while pure water was used as a reactant. Self-textured surface was obtained, resulting in the increase of haze factor reaching up to 35%. Based on the characterization of LP-CVD ZnO thin films, we fabricated the optimized superstrate p-i-n a-Si:H solar cell on glass substrate.
Kim, D.,Yun, I.,Kim, H. Elsevier 2010 CURRENT APPLIED PHYSICS Vol.10 No.3
The low pressure chemical vapor deposition (LP-CVD) of Al doped ZnO thin film was investigated for transparent electrode of thin film solar cell. For LP-CVD, diethylzinc and trimethylaluminum were used as Zn and Al precursors, respectively, while pure water was used as a reactant. Self-textured surface was obtained, resulting in the increase of haze factor reaching up to 35%. Based on the characterization of LP-CVD ZnO thin films, we fabricated the optimized superstrate p-i-n a-Si:H solar cell on glass substrate.
Parametric Study of Methanol Chemical Vapor Deposition Growth for Graphene
Hyunjin Cho,Changhyup Lee,In Seoup Oh,Sungchan Park,Hwan Chul Kim,Myung Jong Kim 한국탄소학회 2012 Carbon Letters Vol.13 No.4
Methanol as a carbon source in chemical vapor deposition (CVD) graphene has an advantage over methane and hydrogen in that we can avoid optimizing an etching reagent condition. Since methanol itself can easily decompose into hydrocarbon and water (an etching reagent) at high temperatures [1], the pressure and the temperature of methanol are the only parameters we have to handle. In this study, synthetic conditions for highly crystalline and large area graphene have been optimized by adjusting pressure and temperature; the effect of each parameter was analyzed systematically by Raman, scanning electron microscope, transmission electron microscope, atomic force microscope, four-point-probe measurement, and UV-Vis. Defect density of graphene, represented by D/G ratio in Raman, decreased with increasing temperature and decreasing pressure; it negatively affected electrical conductivity. From our process and various analyses, methanol CVD growth for graphene has been found to be a safe, cheap, easy, and simple method to produce high quality, large area, and continuous graphene films.
Effect of Ar dilution flow rate on LPCVD a boron-doped carbon coating from BCl3-C3H6-H2-Ar mixtures
Yongsheng Liu,Litong Zhang,Laifei Cheng,Wenbin Yang,Yongdong Xu 한양대학교 세라믹연구소 2009 Journal of Ceramic Processing Research Vol.10 No.3
A boron-doped carbon coating was deposited from a BCl3-C3H6-H2-Ar system by LPCVD. The effects of the Ar dilution flow rate on deposition rates, morphologies, compositions and bonding states were investigated. Deposition rates were almost the same, about 250 nm/h with different Ar dilution flow rate. Surface morphologies were also almost the same. The flat conchoidal aspect of the fracture surface transformed to a laminated structure with an increase in the Ar dilution flow rate. The carbon concentration was above 76.3 at.%, and the boron concentration was less than 17.9 at.%. The boron concentration increased with an increase in the Ar dilution flow rate, corresponding to a decreasing carbon concentration. The main bonding state of boron was B-sub-C and BC2O. The whole deposition process was dominated by a PyC formation reaction, which led to almost the same deposition rate with different Ar dilution flow rates. A boron-doped carbon coating was deposited from a BCl3-C3H6-H2-Ar system by LPCVD. The effects of the Ar dilution flow rate on deposition rates, morphologies, compositions and bonding states were investigated. Deposition rates were almost the same, about 250 nm/h with different Ar dilution flow rate. Surface morphologies were also almost the same. The flat conchoidal aspect of the fracture surface transformed to a laminated structure with an increase in the Ar dilution flow rate. The carbon concentration was above 76.3 at.%, and the boron concentration was less than 17.9 at.%. The boron concentration increased with an increase in the Ar dilution flow rate, corresponding to a decreasing carbon concentration. The main bonding state of boron was B-sub-C and BC2O. The whole deposition process was dominated by a PyC formation reaction, which led to almost the same deposition rate with different Ar dilution flow rates.
이종접합 (HIT) 태양전지용 TCO 로 응용 가능한 BZO (ZnO:B) 박막 연구
유하진(Yoo Ha-Jin),유진혁(Yoo Jin-Hyuk),강민성(Kang Min-Sung),최현곤(Choi Hyun-Gon),손찬희(Son Chan-Hee),강정욱(Kang Jung-Wook),홍진(Hong-Jin),최은하(Choi Eun-Ha),조광섭(Cho Guang-Sup),권기청(Kwon Gi-Chung) 한국태양에너지학회 2010 한국태양에너지학회 학술대회논문집 Vol.2010 No.11
BZO (ZnO:B) thin films were grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) using diethylzinc (DEZ), and H2O as reactant gases and diborane (B2H6) as an n-type dopant gas. Boron and hydrogen were used as a co-dopant and post treatment using hydrogen plasma was performed in oder to boost the effect of co-doping. The structural and electrical of BZO thin films at different H₂ O/DEZ ratio were investigated. At the optimized conditions, low resistivity (1.69?10-3 Ω㎝) and sheet resistance (58 Ω/□) were obtained for the thickness of ~300 ㎚ BZO thin films deposited on glass substrate at the temperature of 453 K and processing pressure of 0.5 Torr. With the application of BZO thin films as transparent conductive oxide (TCO) in hetero-junction intrinsic thin layer (HIT) solar cell, the conversion efficiency was comparable to or higher than the commercialized ITO thin films.
Siew Aun Tan,Kok Hwa Yu,Mohd Zulkifly Abdullah 대한기계학회 2022 JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY Vol.36 No.6
This study employs a three-dimensional numerical model to simulate a vertical furnace for wafer annealing process. For a conventional furnace design, it is revealed that the top 5 pieces of the stacked wafers are exposed to lower temperatures, approximately 3-5 % lower than the operating heater temperature. Temperature distribution and the heat losses from the furnace, especially on the heat dissipated through the top header and the process door of the furnace chamber, are examined. To reduce the heat losses, furnace design improvements comprised of a thicker top header and a better thermal insulated process door are recommended. With such implementations, up to 28 % and 22 % reduction of heat dissipation through the top header and the process door, respectively, could be attained. In addition, the design of the boat cover is found to influence the temperature uniformity across the stacked wafers. To attain better temperature uniformity at the top region of stacked wafers, a furnace with a full boat cover is thus recommended.