Dielectric-breakdown and Conduction-mechanism in a Thinned Alkali-free Glass

Hoikwan Lee,Michael T. Lanagan 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.65 No.7

The leakage current in alkali-free glass was analyzed to understand the dielectric breakdownbehavior and the potential conduction mechanism. The dielectric breakdown strength and theleakage current were increased after the thickness of the glass had been recuded. To identifythe predominant conduction mechanism, we carefully interpreted the dc voltage-current curves viafitting with various conduction mechanisms, e.g.) Poole-Frenkel emission, Schottky emission, spacecharge-limited current, and hopping conduction. The result suggested that the space-charge-limitedcurrent and the hopping conduction of thermally-excited carriers were the most likely mechanismsof conduction in alkali-free glass.

Conduction Mechanism of Charge Carriers in Electrodes and Design Factors for the Improvement of Charge Conduction in Li-ion Batteries

Akhtar, Sophia,Lee, Wontae,Kim, Minji,Park, Min-Sik,Yoon, Won-Sub The Korean Electrochemical Society 2021 Journal of electrochemical science and technology Vol.12 No.1

In-depth knowledge of electrode processes is crucial for determining the electrochemical performance of lithium-ion batteries (LIBs). In particular, the conduction mechanisms of charged species in the electrodes, such as lithium ions (Li+) and electrons, are directly correlated with the performance of the battery because the overall reaction is dependent on the charge transport behavior in the electrodes. Therefore, it is necessary to understand the different electrochemical processes occurring in electrodes in order to elucidate the charge conduction phenomenon. Thus, it is essential to conduct fundamental studies on electrochemical processes to resolve the technical challenges and issues arising during the ionic and electronic conduction. Furthermore, it is also necessary to understand the transport of charged species as well as the predominant factors affecting their transport in electrodes. Based on such in-depth studies, potential approaches can be introduced to enhance the mobility of charged entities, thereby achieving superior battery performances. A clear understanding of the conduction mechanism inside electrodes can help overcome challenges associated with the rapid movement of charged species and provide a practical guideline for the development of advanced materials suitable for high-performance LIBs.

Electrical Conduction Mechanism in ITO/Alq3/Al Rrganic Light-emitting Diodes

Dong-Hoe Chung,이준웅 한국전기전자재료학회 2004 Transactions on Electrical and Electronic Material Vol.5 No.1

We have used ITO/Alq3/Al structure to study electrical conduction mechanism in organic light-emitting diodes. Current-voltage-luminance characteristics were measured at room temperature by varying the thickness of Alq3 layer from 60 to 400mm. We were able to confirm that there are three different mechanisms depending on the applied voltage region; ohmic, space-charge-limited current, and trap-charge-limit-current mechanism. And the maximum luminous efficiency was obtained when the thickness of Alq3 layer is 200nm.

Analysis and Research of Magnetorheological Elastomers Piezoresistive Conductivity

Qiang Liu,Linjing Xiao,Qinghui Song,Yamin Fan 한국자기학회 2018 Journal of Magnetics Vol.23 No.3

On the basis of particle structure analysis, this paper studies the conductive mechanism of magnetorheological elastomers (MRE), and verifies the MRE conduction mechanism model based on the combination of tunnel current and conduction current. The piezoelectric characteristic of MRE is analyzed theoretically and the basic theoretical model of piezoelectric is established. A set of MRE piezoelectric characteristic test device has been designed independently. The test device is used to test the resistance values of MRE samples prepared in this experiment. Finally, the test results of each group are analyzed and compared, and the results show that this element can realize the stability test of MRE piezoelectric conductivity. Under different orders of magnitude, the low particle volume content is more sensitive to the conductivity of MRE samples, and the current flowing through the MRE sample shows a significantly non-linear relationship with the voltage applied to the sample.

Prediction of the Current-Voltage Characteristics and the Bipolar Resistive Switching Mechanism in Polymer-Based Sandwiched Structures

Muhammad Naeem Awais,Muhammad Naeem Shehzad 한국물리학회 2019 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.75 No.5

The prediction of the current-voltage (IV) characteristics of resistive switching devices has remained a challenge before their physical realization. This research work addresses the prediction of the IV characteristics and the bipolar switching mechanism of polymer-based resistive switches by examining their structures before their fabrication. The research was carried out through an analytical study of the device structure, thereby correlating the predicted IV curve to the \textit{in-situ} IV characteristics of the device. Different types of the device structures were considered, depending upon the work function of the top and the bottom electrodes and the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) levels of the sandwiched layer. We concluded that the defects/traps within the sandwiched layer lead to the interface effect being the dominant switching mechanism driving the polymer-based resistive switches. Furthermore, we also found that the devices following the interface effect are driven from trap-limited space-charge-limited current (SCLC) conduction to trap-free SCLC conduction as their current conduction mechanisms.

Resistive Switching and Current Conduction Mechanism in Full Organic Resistive Switch with the Sandwiched Structure of Poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)/Poly(4-vinylphenol)/Poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)

Muhammad Naeem Awais,최경현 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.3

The paper reported the fabrication of full organic resistive switch (FORS) with the sandwich structure of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)/poly(4-vinylphenol)(PVP)/poly(3,4- ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS). The fabricated FORS elucidated reversible bipolar resistive switching behavior at higher operational voltage between −20 V and +30 V. The switching mechanism in the FORS device was attributed to the hole injection through PEDOT:PSS electrode and filling of trap sites in the PVP sandwiched layer by the limited injection. Current conduction mechanisms were concluded and supported by the charge transport governing physical laws. The dominant current conduction mechanism in the fabricated FORS was attributed to the transition from trap-limited space charge limited current (SCLC) conduction to trap-free SCLC conduction mechanism. The robustness of the fabricated FORS was tested over 100 multiple voltage sweeps.

Dependence of the lithium ionic conductivity on the B-siteion substitution in $(Li_{0.5}La_{0.5})Ti_{1-x}M_xO_3$

Kim, Jin-Gyun,Kim, Ho-Gi The Korean Institute of Electrical and Electronic 1998 전기전자재료 Vol.11 No.11

The dependence of the ionic conductivity on the B-site ion substitution in (Li0.5La0.5)Ti1-xMxO3 (M=Sn, Zr, Mn, Ge) system has been studied. Same valence state and various electronic configuration and ionic radius of Sn4+, Zr4+, Mn4+ and Ge4+(4d10(0.69$\AA$), 4p6(0.72$\AA$), 3d10(0.54$\AA$) and 3d3(0.54$\AA$), respectively) induced the various crystallographic variaton with substitutions. So it was possibleto investigate the crystallographic factor which influence the ionic conduction by observing the dependence of the conductivity on the crystallographic factor which influence the ionic conduction by observing the dependence of the conductivity on the crystallographic variations. We found that the conductivity increased with decreasing the radii of B-site ions or vice versa and octahedron distortion disturb the ion conduction. The reason for this reciprocal proportion of conductivity on the radius of B-site ions has been examined on the base of the interatomic bond strength change due to the cation substitutions. The results were good in agreement with the experimental results. Therefore it could be concluded that the interatomic bond strength change due to the cation substitutions may be the one of major factors influencing the lithium ion conductivity in perovskite(Li0.5La0.5) TiO3system.

Development of Eco-Friendly Ag Embedded Peroxo Titanium Complex Solution B as ed Thin Film and E lectrical B ehaviors of Res istive R andom Access Memory

김원진,이진호,김륜나,이동희,김우병 한국재료학회 2024 한국재료학회지 Vol.34 No.3

In this study, we introduce a novel TiN/Ag embedded TiO2/FTO resistive random-access memory (RRAM) device. This distinctive device was fabricated using an environmentally sustainable, solution-based thin film manufacturing process. Utilizing the peroxo titanium complex (PTC) method, we successfully incorporated Ag precursors into the device architecture, markedly enhancing its performance. This innovative approach effectively mitigates the random filament formation typically observed in RRAM devices, and leverages the seed effect to guide filament growth. As a result, the device demonstrates switching behavior at substantially reduced voltage and current levels, heralding a new era of low-power RRAM operation. The changes occurring within the insulator depending on Ag contents were confirmed by X-ray photoelectron spectroscopy (XPS) analysis. Additionally, we confirmed the correlation between Ag and oxygen vacancies (Vo). The current-voltage (I-V ) curves obtained suggest that as the Ag content increases there is a change in the operating mechanism, from the space charge limited conduction (SCLC) model to ionic conduction mechanism. We propose a new filament model based on changes in filament configuration and the change in conduction mechanisms. Further, we propose a novel filament model that encapsulates this shift in conduction behavior. This model illustrates how introducing Ag alters the filament configuration within the device, leading to a more efficient and controlled resistive switching process.

Electrical Conductivity and Mechanical Properties of Dendritic Copper Particulate Polymer Films

B. Shivamurthy,B. H. S. Thimmappa,Rohan Purushothama,G. K. V. D. Datta Sai 한국전기전자재료학회 2019 Transactions on Electrical and Electronic Material Vol.20 No.2

Hybrid fi ller loaded multi-layer polymer composites are becoming one of the suitable alternative material for electromagnetic interference shielding (EMIS) applications. Mainly these composites are manufactured by conductive/magnetic fabrics, foams, foils or fi lms or a combination of all, layered in an orderly architecture to obtain eff ective EMIS. In this work, dendrite structured copper particulate dispersed in cellulose acetate polymer (CA). We have developed approximately 100-micron thickness of cellulose acetate/copper fi ller (CA/Cu) fi lms (7–55 wt%) and a neat CA fi lm. The electrical conductivity, tensile strength, percentage of elongation, burst strength and folding endurance of CA/Cu fi lms were measured and compared. The percolation threshold for conductivity was found at 28 wt% and the drastic increase in conductivity at 28–37 wt%. The mechanical strength of CA/Cu composite fi lms was investigated and reported.

비냉각 적외선 감지기용 비나듐 산화막의 전기전도기구

최용남,최복길,이규대 공주대학교 생산기술연구소 2001 論文集 Vol.9 No.-

Thin films of vanadium oxide(VO_(x)) have been deposited by r.f. magnetron sputtering from V_(2)O_(5) target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition and electrical properties of films sputter-deposited under different oxygen gas pressures have been characterized through XRD, AES, RBS and electrical conductivity measurements. All the films prepared below 8% O_(2) are amorphous, and those prepared without oxygen are gray indicating the presence of V_(2)O_(4) phase in the films. In order to measure the current-voltage characteristics and temperature dependence of conductance, devices of A1/VO_(x)/A1 sandwich structure have been fabricated. I-V characteristics are distinguished between linear and nonlinear region. In the low field region the conduction is due to Schottky emission, while at high field it changes to Fowler-Nordheim tunneling type conduction. The conductivity measurements have shown an Arrhenius dependence of the conductivity on the temperature.